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Article: Temperature dependence of current gain of GalnP/GaAs heteroj unction and heterostructure-emitter bipolar transistors

TitleTemperature dependence of current gain of GalnP/GaAs heteroj unction and heterostructure-emitter bipolar transistors
Authors
Yang, ESYang, YFHsu, CCOu, HJLo, HB
Issue Date1999
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
Ieee Transactions On Electron Devices, 1999, v. 46 n. 2, p. 320-323 How to Cite?
DOI: http://dx.doi.org/10.1109/16.740896
AbstractThe temperature effect on current gain is presented for GalnP/GaAs heterojunction and heterostructure-emitter bipolar transistors (HBT's and HEBT's). Experimental results showed that the current gain of the HEBT increases with the increase of temperature in the temperature range of 25-125 °C and decreases slightly at temperatures above 150 °C. The smaller the collector current, the larger is the positive differential temperature coefficient. At high current levels, the current gain dependence on temperature is significantly reduced. On the other hand, a large negative coefficient is observed in the HBT in all current range. This finding indicates that the HEBT is a better candidate than the HBT for power devices. © 1999 IEEE Publisher Item Identifier S 0018-9383(99)00257-9.
Persistent Identifierhttp://hdl.handle.net/10722/42794
ISSN
0018-9383
2023 Impact Factor: 2.9
2023 SCImago Journal Rankings: 0.785
ISI Accession Number ID
WOS:000078226700007
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorYang, ESen_HK
dc.contributor.authorYang, YFen_HK
dc.contributor.authorHsu, CCen_HK
dc.contributor.authorOu, HJen_HK
dc.contributor.authorLo, HBen_HK
dc.date.accessioned2007-03-23T04:32:21Z-
dc.date.available2007-03-23T04:32:21Z-
dc.date.issued1999en_HK
dc.identifier.citationIeee Transactions On Electron Devices, 1999, v. 46 n. 2, p. 320-323en_HK
dc.identifier.issn0018-9383en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42794-
dc.description.abstractThe temperature effect on current gain is presented for GalnP/GaAs heterojunction and heterostructure-emitter bipolar transistors (HBT's and HEBT's). Experimental results showed that the current gain of the HEBT increases with the increase of temperature in the temperature range of 25-125 °C and decreases slightly at temperatures above 150 °C. The smaller the collector current, the larger is the positive differential temperature coefficient. At high current levels, the current gain dependence on temperature is significantly reduced. On the other hand, a large negative coefficient is observed in the HBT in all current range. This finding indicates that the HEBT is a better candidate than the HBT for power devices. © 1999 IEEE Publisher Item Identifier S 0018-9383(99)00257-9.en_HK
dc.format.extent106038 bytes-
dc.format.extent4187 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16en_HK
dc.relation.ispartofIEEE Transactions on Electron Devicesen_HK
dc.rights©1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.titleTemperature dependence of current gain of GalnP/GaAs heteroj unction and heterostructure-emitter bipolar transistorsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0018-9383&volume=46&issue=2&spage=320&epage=323&date=1999&atitle=Temperature+dependence+of+current+gain+of+GaInP/GaAs+heterojunction+and+heterostructure-emitter+bipolar+transistorsen_HK
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_HK
dc.identifier.authorityYang, ES=rp00199en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/16.740896en_HK
dc.identifier.scopuseid_2-s2.0-0033079436en_HK
dc.identifier.hkuros44576-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0033079436&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume46en_HK
dc.identifier.issue2en_HK
dc.identifier.spage320en_HK
dc.identifier.epage323en_HK
dc.identifier.isiWOS:000078226700007-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridYang, ES=7202021229en_HK
dc.identifier.scopusauthoridYang, YF=54681462500en_HK
dc.identifier.scopusauthoridHsu, CC=7404947020en_HK
dc.identifier.scopusauthoridOu, HJ=7005561022en_HK
dc.identifier.scopusauthoridLo, HB=7202085394en_HK
dc.identifier.issnl0018-9383-

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