| Title | Author(s) | Year | View Count |
 | A case study of teacher appraisal in Shanghai, China: In relation to teacher professional development | Zhang, XF; Ng, HM | 2011 | 41 |
 | Comparative study of HfTa-based gate-dielectric Ge metal-oxide- semiconductor capacitors with and without AlON interlayer | Xu, JP; Zhang, XF; Li, CX; Chan, CL; Lai, PT | 2010 | 228 |
| Enhanced performance of Si MOS capacitors with HfTaOxNy gate dielectric by using AlOxNy or TaOxNy interlayer | Li, CX; Zhang, XF; Xu, JP; Lai, PT | 2008 | 176 |
 | Fabrication and characterization of multi-channel chitosan nerve conduit and its potential application | Ao, Q; Wang, AJ; Chen, GQ; Zuo, HC; Zhang, XF; Fung, CK; Tsui, Y; Shum, DKY; Chan, YS | 2008 | 83 |
| Improved electrical properties of Ge p-MOSFET with HfO 2 gate dielectric by using TaO xN y interlayer | Xu, JP; Zhang, XF; Li, CX; Lai, PT; Chan, CL | 2008 | 348 |
| Improved electrical properties of Ge metal-oxide-semiconductor capacitor with HfTa-based gate dielectric by using TaOxNy interlayer | Zhang, XF; Xu, JP; Li, CX; Lai, PT; Chan, CL; Guan, JG | 2008 | 274 |
| A physical model on scattering at high-κ dielectric/SiO2 interface of SiGe p-MOSFETs | Zhang, XF; Xu, JP; Lai, PT; Li, CX | 2007 | 50 |
| Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k dielectric/SiO2 gate stack | Zhang, XF; Xu, JP; Lai, PT; Li, CX; Guan, JG | 2007 | 69 |
| Gate-leakage model of Ge MOS capacitor with high-k gate dielectric | Zou, X; Xu, JP; Lai, PT; Li, CX; Zhang, XF | 2007 | 81 |
| Modeling of scattering at high-k dielectric/SiO2 interface of strained SiGe MOSFETs | Zhang, XF; Xu, JP; Lai, PT; Zou, X; Li, CX | 2007 | 105 |
| Gate Leakage Model of Ge MOS Capacitor with High-k Gate Dielectric | Zou, X; Xu, JP; Lai, PT; Li, C; Zhang, XF | 2006 | 108 |
| Microstructure of carbon filled HDPE/EPDM composites studied by positron annihilation spectroscopy | Weng, HM; Jia, SJ; Ye, BJ; Zhang, XF; Han, RD; Wang, XY; Zhou, HY; Zhang, ZC; Ling, CC | 2004 | 139 |
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