Results 1 to 14 of 14
Page 1 of 1
TypeTitleAuthor(s)YearViews
A case study of teacher appraisal in Shanghai, China: In relation to teacher professional development
Journal:
Asia Pacific Education Review
Publisher:
Springer Netherlands. The Journal's web site is located at http://www.springer.com/education/journal/12564
Zhang, XF; Ng, HM2011122
 
A case study of teacher appraisal in relation to teacher professional development
Journal:
Asia Pacific Education Review
Publisher:
The Institute of Asia Pacific Education Development, Seoul. The Journal's web site is located at http://www.springer.com/education/journal/12564
Zhang, XF; Ng, HM20111
 
Comparative study of HfTa-based gate-dielectric Ge metal-oxide- semiconductor capacitors with and without AlON interlayer
Journal:
Applied Physics A: Materials Science and Processing
Publisher:
Springer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm
Xu, JP; Zhang, XF; Li, CX; Chan, CL; Lai, PT2010314
 
The Development Of Creation Of Income In Schools - A Case Study Of Huangpu District In Shanghai
Book:
The New Perspective of Teacher Education and Educational Leadership
Publisher:
Peking University Press
Zhang, XF; Ng, HM20093
 
Fabrication and characterization of multi-channel chitosan nerve conduit and its potential application
Proceedings/Conference:
Abstracts of Third International Symposium on Healthy Aging - Improving the Health of an Aging Population: 30. March 1-2
Ao, Q; Wang, AJ; Chen, GQ; Zuo, HC; Zhang, XF; Fung, CK; Tsui, Y; Shum, DKY; Chan, YS2008129
 
Improved electrical properties of Ge p-MOSFET with HfO 2 gate dielectric by using TaO xN y interlayer
Journal:
IEEE Electron Device Letters
Publisher:
I E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55
Xu, JP; Zhang, XF; Li, CX; Lai, PT; Chan, CL2008329
 
Enhanced performance of Si MOS capacitors with HfTaOxNy gate dielectric by using AlOxNy or TaOxNy interlayer
Proceedings/Conference:
IEEE Conference on Electron Devices and Solid-State Circuits Proceedings
Publisher:
IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853
Li, CX; Zhang, XF; Xu, JP; Lai, PT2008209
 
Improved electrical properties of Ge metal-oxide-semiconductor capacitor with HfTa-based gate dielectric by using TaOxNy interlayer
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Zhang, XF; Xu, JP; Li, CX; Lai, PT; Chan, CL; Guan, JG2008280
 
Gate-leakage model of Ge MOS capacitor with high-k gate dielectric
Proceedings/Conference:
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Zou, X; Xu, JP; Lai, PT; Li, CX; Zhang, XF2007135
 
Modeling of scattering at high-k dielectric/SiO2 interface of strained SiGe MOSFETs
Proceedings/Conference:
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Zhang, XF; Xu, JP; Lai, PT; Zou, X; Li, CX2007120
 
A physical model on scattering at high-κ dielectric/SiO2 interface of SiGe p-MOSFETs
Journal:
IEEE Transactions on Electron Devices
Publisher:
I E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Zhang, XF; Xu, JP; Lai, PT; Li, CX200784
 
Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k dielectric/SiO2 gate stack
Journal:
Chinese Physics
Publisher:
Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/cp
Zhang, XF; Xu, JP; Lai, PT; Li, CX; Guan, JG2007139
 
Gate Leakage Model of Ge MOS Capacitor with High-k Gate Dielectric
Proceedings/Conference:
Proceedings of 8th ICSICT
Zou, X; Xu, JP; Lai, PT; Li, C; Zhang, XF2006114
 
Microstructure of carbon filled HDPE/EPDM composites studied by positron annihilation spectroscopy
Proceedings/Conference:
Materials Science Forum
Publisher:
Trans Tech Publications Ltd. The Journal's web site is located at http://www.scientific.net
Weng, HM; Jia, SJ; Ye, BJ; Zhang, XF; Han, RD; Wang, XY; Zhou, HY; Zhang, ZC; Ling, CC2004182
 
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