| Title | Author(s) | Year | View Count |
 | Interface characterization and internal electric field evaluation of a-Si:H pin solar cell by variable energy positron annihilation spectroscopy | Zou, X; Chan, YC; Webb, DP; Lam, YW; Chan, FYM; Lin, SH; Hu, YF; Beling, CD; Fung, S | 1999 | 30 |
| Identification of vacancy-like defects in high-rate grown a-Si before and after light soaking by VEPAS | Zou, X; Chan, YC; Webb, DP; Lam, YW; Lin, SH; Chan, FYM; Hu, YF; Weng, X; Beling, CD; Fung, S | 1999 | 34 |
 | Probing of Microvoids in High-Rate Deposited a-Si:H Thin Films by Variable Energy Positron Annihilation Spectroscopy | Zou, X; Webb, DP; Chan, YC; Lam, YW; Hu, Y; Fung, SHY; Beling, CD | 1998 | 104 |
| Depth Profiling of Vacancy-Type Defects in Homogenous and Mutlilayered a-Si Films by Positron Beam Doppler Broadening | Zou, X; Webb, DP; Chan, YC; Lam, YW; Hu, Y; Gong, M; Beling, CD; Fung, SHY | 1998 | 121 |
| Depth profiling of vacancy-type defects in homogenous and multilayered a-Si films by positron beam Doppler broadening | Zou, X; Webb, DP; Chan, YC; Lam, YW; Hu, YF; Gong, M; Beling, CD; Fung, S | 1998 | 31 |
| Probing of microvoids in high-rate deposited α-Si : H thin films by variable energy positron annihilation spectroscopy | Zou, X; Webb, DP; Chan, YC; Lam, YW; Hu, YF; Fung, S; Beling, CD | 1998 | 29 |
 | Study of microvoids in high-rate a-Si:H using positron annihilation | Zou, X; Webb, DP; Lin, SH; Lam, YW; Chan, YC; Hu, YF; Beling, CD; Fung, SHY | 1997 | 334 |
| Cell type- and differentiation stage-dependent expression of PML domains in rat, detected by monoclonal antibody HIS55 | Lam, YW; Ammerlaan, W; O, WS; Kroese, F; Opstelten, D | 1995 | 112 |
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