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Showing results 26 to 32 of 32 < previous

	Title	Author(s)	Issue Date	Views
	Simulation and measurement of topological phase transitions with alkaline-earth-metal atoms in optical lattices Journal:Physical Review A: covering atomic, molecular, and optical physics and quantum information	Wang, B Wu, Y Zheng, Z Zou, X	2019	2
	Study of microvoids in high-rate a-Si:H using positron annihilation Proceeding/Conference:Materials Research Society Symposium Proceedings	Zou, X Webb, DP Lin, SH Lam, YW Chan, YC Hu, YF Beling, CD Fung, SHY	1997	91
	Suppressed growth of interlayer GeO x in Ge MOS capacitors with gate dielectric prepared in wet NO ambient Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC) Proceedings	Lai, PT Li, CX Xu, JP Zou, X Chan, CL	2005	80
	Suppressed growth of unstable low-fr GeOx interlayer in Ge metal-oxide-semiconductor capacitor with high-k gate dielectric by annealing in water vapor Journal:Applied Physics Letters	Zou, X Xu, JP Li, CX Lai, PT	2007	78
	Threshold voltage model of SiGe channel pMOSFET without Si cap layer Proceeding/Conference:2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC	Zou, X Li, CX Xu, JP Lai, PT Chen, WB	2006	57
	A threshold-voltage model of SiGe-channel pMOSFET without Si cap layer Journal:Microelectronics Reliability	Zou, X Xu, JP Li, CX Lai, PT Chen, WB	2007	94
	Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness Journal:Thin Solid Films	Xu, JP Zou, X Lai, PT Li, CX Chan, CL	2009	64

Showing results 26 to 32 of 32 < previous