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Conference Paper: Study of microvoids in high-rate a-Si:H using positron annihilation

TitleStudy of microvoids in high-rate a-Si:H using positron annihilation
Authors
KeywordsPhysics engineering chemistry
Issue Date1997
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
Amorphous and microcrystalline silicon technology, Materials Research Society Symposium Proceedings, San Francisco, California, USA, 31 March - 4 April 1997, v. 467, p. 525-530 How to Cite?
AbstractIn this paper, we have carried out the positron annihilation measurement on high-rate and low-rate a-Si;H thin films deposited by PECVD. By means of the slow positron beam Doppler-broadening technique, the depth profiles of microvoids in a-Si:H have been determined. We have also studied the vacancy-type defect in the surface region in high-rate grown a-Si:H, making comparison between high-rate and low-rate a-Si:H. By plotting S and W parameters in the (S, W) plane, we have shown that the vacancies in all of the high-rate and low-rate deposited intrinsic samples, and in differently doped low-rate samples are of the same nature.
Persistent Identifierhttp://hdl.handle.net/10722/47031
ISSN
2013 SCImago Journal Rankings: 0.128

 

DC FieldValueLanguage
dc.contributor.authorZou, Xen_HK
dc.contributor.authorWebb, DPen_HK
dc.contributor.authorLin, SHen_HK
dc.contributor.authorLam, YWen_HK
dc.contributor.authorChan, YCen_HK
dc.contributor.authorHu, YFen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, SHYen_HK
dc.date.accessioned2007-10-30T07:04:51Z-
dc.date.available2007-10-30T07:04:51Z-
dc.date.issued1997en_HK
dc.identifier.citationAmorphous and microcrystalline silicon technology, Materials Research Society Symposium Proceedings, San Francisco, California, USA, 31 March - 4 April 1997, v. 467, p. 525-530en_HK
dc.identifier.issn0272-9172en_HK
dc.identifier.urihttp://hdl.handle.net/10722/47031-
dc.description.abstractIn this paper, we have carried out the positron annihilation measurement on high-rate and low-rate a-Si;H thin films deposited by PECVD. By means of the slow positron beam Doppler-broadening technique, the depth profiles of microvoids in a-Si:H have been determined. We have also studied the vacancy-type defect in the surface region in high-rate grown a-Si:H, making comparison between high-rate and low-rate a-Si:H. By plotting S and W parameters in the (S, W) plane, we have shown that the vacancies in all of the high-rate and low-rate deposited intrinsic samples, and in differently doped low-rate samples are of the same nature.en_HK
dc.format.extent287963 bytes-
dc.format.extent13983 bytes-
dc.format.extent5932 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_HK
dc.rightsMaterials Research Society Symposium Proceedings. Copyright © Materials Research Society.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineering chemistryen_HK
dc.titleStudy of microvoids in high-rate a-Si:H using positron annihilationen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0272-9172&volume=467&spage=525&epage=530&date=1997&atitle=Study+of+microvoids+in+high-rate+a-Si:H+using+positron+annihilationen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.hkuros39167-

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