Conference Paper: Study of microvoids in high-rate a-Si:H using positron annihilation
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| Title | Study of microvoids in high-rate a-Si:H using positron annihilation |
|---|---|
| Authors | Zou, X Webb, DP Lin, SH Lam, YW Chan, YC Hu, YF Beling, CD Fung, SHY |
| Keywords | Physics engineering chemistry |
| Issue Date | 1997 |
| Publisher | Materials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html |
| Citation | Amorphous and microcrystalline silicon technology, Materials Research Society Symposium Proceedings, San Francisco, California, USA, 31 March - 4 April 1997, v. 467, p. 525-530 [How to Cite?] |
| Abstract | In this paper, we have carried out the positron annihilation measurement on high-rate and low-rate a-Si;H thin films deposited by PECVD. By means of the slow positron beam Doppler-broadening technique, the depth profiles of microvoids in a-Si:H have been determined. We have also studied the vacancy-type defect in the surface region in high-rate grown a-Si:H, making comparison between high-rate and low-rate a-Si:H. By plotting S and W parameters in the (S, W) plane, we have shown that the vacancies in all of the high-rate and low-rate deposited intrinsic samples, and in differently doped low-rate samples are of the same nature. |
| ISSN | 0272-9172 2011 SCImago Journal Rankings: 0.029 |
| dc.contributor.author | Zou, X |
|---|---|
| dc.contributor.author | Webb, DP |
| dc.contributor.author | Lin, SH |
| dc.contributor.author | Lam, YW |
| dc.contributor.author | Chan, YC |
| dc.contributor.author | Hu, YF |
| dc.contributor.author | Beling, CD |
| dc.contributor.author | Fung, SHY |
| dc.date.accessioned | 2007-10-30T07:04:51Z |
| dc.date.available | 2007-10-30T07:04:51Z |
| dc.date.issued | 1997 |
| dc.description.abstract | In this paper, we have carried out the positron annihilation measurement on high-rate and low-rate a-Si;H thin films deposited by PECVD. By means of the slow positron beam Doppler-broadening technique, the depth profiles of microvoids in a-Si:H have been determined. We have also studied the vacancy-type defect in the surface region in high-rate grown a-Si:H, making comparison between high-rate and low-rate a-Si:H. By plotting S and W parameters in the (S, W) plane, we have shown that the vacancies in all of the high-rate and low-rate deposited intrinsic samples, and in differently doped low-rate samples are of the same nature. |
| dc.description.nature | published_or_final_version |
| dc.format.extent | 287963 bytes |
| dc.format.extent | 13983 bytes |
| dc.format.extent | 5932 bytes |
| dc.format.mimetype | application/pdf |
| dc.format.mimetype | application/pdf |
| dc.format.mimetype | text/plain |
| dc.identifier.citation | Amorphous and microcrystalline silicon technology, Materials Research Society Symposium Proceedings, San Francisco, California, USA, 31 March - 4 April 1997, v. 467, p. 525-530 [How to Cite?] |
| dc.identifier.hkuros | 39167 |
| dc.identifier.issn | 0272-9172 2011 SCImago Journal Rankings: 0.029 |
| dc.identifier.openurl |  |
| dc.identifier.uri | http://hdl.handle.net/10722/47031 |
| dc.language | eng |
| dc.publisher | Materials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html |
| dc.rights | Materials Research Society Symposium Proceedings. Copyright © Materials Research Society. |
| dc.rights | Creative Commons: Attribution 3.0 Hong Kong License |
| dc.subject | Physics engineering chemistry |
| dc.title | Study of microvoids in high-rate a-Si:H using positron annihilation |
| dc.type | Conference_Paper |