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Conference Paper: Study of microvoids in high-rate a-Si:H using positron annihilation
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TitleStudy of microvoids in high-rate a-Si:H using positron annihilation
 
AuthorsZou, X
Webb, DP
Lin, SH
Lam, YW
Chan, YC
Hu, YF
Beling, CD
Fung, SHY
 
KeywordsPhysics engineering chemistry
 
Issue Date1997
 
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
 
CitationAmorphous and microcrystalline silicon technology, Materials Research Society Symposium Proceedings, San Francisco, California, USA, 31 March - 4 April 1997, v. 467, p. 525-530 [How to Cite?]
 
AbstractIn this paper, we have carried out the positron annihilation measurement on high-rate and low-rate a-Si;H thin films deposited by PECVD. By means of the slow positron beam Doppler-broadening technique, the depth profiles of microvoids in a-Si:H have been determined. We have also studied the vacancy-type defect in the surface region in high-rate grown a-Si:H, making comparison between high-rate and low-rate a-Si:H. By plotting S and W parameters in the (S, W) plane, we have shown that the vacancies in all of the high-rate and low-rate deposited intrinsic samples, and in differently doped low-rate samples are of the same nature.
 
ISSN0272-9172
2013 SCImago Journal Rankings: 0.128
 
DC FieldValue
dc.contributor.authorZou, X
 
dc.contributor.authorWebb, DP
 
dc.contributor.authorLin, SH
 
dc.contributor.authorLam, YW
 
dc.contributor.authorChan, YC
 
dc.contributor.authorHu, YF
 
dc.contributor.authorBeling, CD
 
dc.contributor.authorFung, SHY
 
dc.date.accessioned2007-10-30T07:04:51Z
 
dc.date.available2007-10-30T07:04:51Z
 
dc.date.issued1997
 
dc.description.abstractIn this paper, we have carried out the positron annihilation measurement on high-rate and low-rate a-Si;H thin films deposited by PECVD. By means of the slow positron beam Doppler-broadening technique, the depth profiles of microvoids in a-Si:H have been determined. We have also studied the vacancy-type defect in the surface region in high-rate grown a-Si:H, making comparison between high-rate and low-rate a-Si:H. By plotting S and W parameters in the (S, W) plane, we have shown that the vacancies in all of the high-rate and low-rate deposited intrinsic samples, and in differently doped low-rate samples are of the same nature.
 
dc.description.naturepublished_or_final_version
 
dc.format.extent287963 bytes
 
dc.format.extent13983 bytes
 
dc.format.extent5932 bytes
 
dc.format.mimetypeapplication/pdf
 
dc.format.mimetypeapplication/pdf
 
dc.format.mimetypetext/plain
 
dc.identifier.citationAmorphous and microcrystalline silicon technology, Materials Research Society Symposium Proceedings, San Francisco, California, USA, 31 March - 4 April 1997, v. 467, p. 525-530 [How to Cite?]
 
dc.identifier.hkuros39167
 
dc.identifier.issn0272-9172
2013 SCImago Journal Rankings: 0.128
 
dc.identifier.openurl
 
dc.identifier.urihttp://hdl.handle.net/10722/47031
 
dc.languageeng
 
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
 
dc.rightsMaterials Research Society Symposium Proceedings. Copyright © Materials Research Society.
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.subjectPhysics engineering chemistry
 
dc.titleStudy of microvoids in high-rate a-Si:H using positron annihilation
 
dc.typeConference_Paper
 
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