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Browsing by Author ZOU, X
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Showing results 34 to 43 of 43
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Title
Author(s)
Issue Date
Simulation and measurement of topological phase transitions with alkaline-earth-metal atoms in optical lattices
Journal:
Physical Review A: covering atomic, molecular, and optical physics and quantum information
Wang, B
Wu, Y
Zheng, Z
Zou, X
2019
Slow Hole Transfer Kinetics Lead to High Blend Photoluminescence of Unfused A–D–A′–D–A‐Type Acceptors with Unfavorable Highest Occupied Molecular Orbitals Offset
Journal:
Solar RRL
Zou, X
Yu, H
Qi, Z
Liu, B
Xing, Z
Chan, CCS
Chow, CYP
Pan, D
Yan, H
Wong, KS
2022
Study of microvoids in high-rate a-Si:H using positron annihilation
Proceeding/Conference:
Materials Research Society Symposium Proceedings
Zou, X
Webb, DP
Lin, SH
Lam, YW
Chan, YC
Hu, YF
Beling, CD
Fung, SHY
1997
Suppressed growth of interlayer GeO x in Ge MOS capacitors with gate dielectric prepared in wet NO ambient
Proceeding/Conference:
IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC) Proceedings
Lai, PT
Li, CX
Xu, JP
Zou, X
Chan, CL
2005
Suppressed growth of unstable low-fr GeOx interlayer in Ge metal-oxide-semiconductor capacitor with high-k gate dielectric by annealing in water vapor
Journal:
Applied Physics Letters
Zou, X
Xu, JP
Li, CX
Lai, PT
2007
The interplay between father–child and mother–child numeracy activities and preschool children’s mathematical skills
Journal:
Contemporary Educational Psychology
ZOU, X
Zhang, X
Ouyang, X
2022
Threshold voltage model of SiGe channel pMOSFET without Si cap layer
Proceeding/Conference:
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Zou, X
Li, CX
Xu, JP
Lai, PT
Chen, WB
2006
A threshold-voltage model of SiGe-channel pMOSFET without Si cap layer
Journal:
Microelectronics Reliability
Zou, X
Xu, JP
Li, CX
Lai, PT
Chen, WB
2007
Unraveling the Temperature Dependence of Exciton Dissociation and Free Charge Generation in Nonfullerene Organic Solar Cells
Journal:
Solar RRL
Ma, C
Chan, CCS
Zou, X
Yu, H
Zhang, J
Yan, H
Wong, KS
Chow, PCY
2021
Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness
Journal:
Thin Solid Films
Xu, JP
Zou, X
Lai, PT
Li, CX
Chan, CL
2009