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Browsing by Author Fong, WK
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Showing results 1 to 9 of 9
Title
Author(s)
Issue Date
Degradation mechanism of GaN-based LEDs with different growth parameters
Journal:
Materials Research Society Symposium Proceedings
Leung, KK
Fong, WK
Chan, PKL
Surya, C
2010
Doping of GaN by Mg diffusion
Proceeding/Conference:
Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings
To, T
Djurisic, AB
Xie, MH
Fong, WK
Surya, C
2002
Effects of Ar+ back-surface gettering on the properties of flicker noise in n-channel nitrided MOSFETs
Journal:
Solid-State Electronics
Surya, C
Wang, W
Fong, WK
Chan, CH
Lai, PT
1996
Effects of low-energy back surface gettering on the properties of 1/f noise in n-channel nitrided MOSFETs
Proceeding/Conference:
IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Surya, Charles
Wang, W
Fong, WK
Chan, CH
Lai, PT
1997
Fabrication and characterization of indium-tin-oxide/GaN visible-blind UV detectors
Journal:
Physica Status Solidi (C) Current Topics in Solid State Physics
Lui, HF
Fong, WK
Surya, C
Cheung, CH
Djurišić, AB
2006
Hot-electron induced degradations in GaN-based LEDs fabricated on nanoscale epitaxial lateral overgrown layers
Journal:
Solid-State Electronics
Zhang, ZW
Zhu, CF
Fong, WK
Leung, KK
Chan, KL
Surya, C
2011
Hot-electron induced degradations in GaN-based LEDs fabricated on nanoscale epitaxial lateral overgrown layers
Journal:
Solid-State Electronics
Zhang, ZW
Zhu, CF
Fong, WK
Leung, KK
Chan, PKL
Surya, C
2011
Physical mechanisms for hot-electron degradation in GaN light-emitting diodes
Journal:
Journal of Applied Physics
Leung, KK
Fong, WK
Chan, PKL
Surya, C
2010
Properties of Si-SiO2 interface traps due to low-energy Ar+ backsurface bombardment in n-channel nitrided MOSFETs
Proceeding/Conference:
I E E E Hong Kong Electron Devices Meeting Proceedings
Surya, C
Wang, W
Fong, WK
Chan, CH
Lai, PT
1996