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Article: Physical mechanisms for hot-electron degradation in GaN light-emitting diodes

TitlePhysical mechanisms for hot-electron degradation in GaN light-emitting diodes
Authors
KeywordsAtomic Force Microscopy
Defect Density
Defects
Degradation
Gallium Alloys
Gallium Nitride
Infrared Imaging
Light Emission
Light Emitting Diodes
Organic Light Emitting Diodes (Oled)
Scanning Electron Microscopy
Transmission Electron Microscopy
Issue Date2010
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2010, v. 107 n. 7 How to Cite?
AbstractWe report investigations on the degradation of GaN-based light-emitting diodes due to high dc current stress by examining two types of devices with the same fabrication procedures except for the growth conditions for the InGaN quantum wells (QWs). Higher trimethylindium and triethylgallium fluxes are used for type A devices resulting in a threefold increase in the InGaN QWs growth rate compared to type B devices. Detailed structural and optoelectronic properties of the devices are investigated by transmission electron microscopy, atomic force microscopy, thermal imaging, I-V measurements, and the low-frequency noise properties of the devices as a function of the stress time, t S. The experimental data show that the QWs in type B devices are dominated by spiral growth and they have substantially higher strain nonuniformity than type A devices. The highly strained GaN/InGaN interfaces in device B are also responsible for the faster increase in the defect density due to hot-electron injection. The defects enhance the trap-assisted tunneling in the multiple quantum wells (MQWs) resulting in the development of hot spots among type B devices after high current stressing of the MQWs. This in turn leads to an increase in the defect generation rate resulting in a thermal run-away condition that ultimately resulted in the failure of the device. The data show that an increase in the growth rate in the InGaN layer led to the domination by the step flow growth mode over the spiral growth mode in the MQWs. This is the main reason for the reduction in the dislocation density in type A devices and hence their increase in device reliability. © 2010 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/141700
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
Funding AgencyGrant Number
Innovative Technology Commission under the Guangdong/Hong Kong SchemeGHP/031/07GD
RGCPolyU 5112/08E
Hong Kong Polytechnic University
Funding Information:

This work is supported in part by a grant from the Innovative Technology Commission under the Guangdong/Hong Kong Scheme (Project No. GHP/031/07GD) and an RGC Grant (Grant No. PolyU 5112/08E). Further support is provided by a Niche area grant of the Hong Kong Polytechnic University.

References

 

DC FieldValueLanguage
dc.contributor.authorLeung, KKen_HK
dc.contributor.authorFong, WKen_HK
dc.contributor.authorChan, PKLen_HK
dc.contributor.authorSurya, Cen_HK
dc.date.accessioned2011-09-27T02:58:18Z-
dc.date.available2011-09-27T02:58:18Z-
dc.date.issued2010en_HK
dc.identifier.citationJournal Of Applied Physics, 2010, v. 107 n. 7en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/141700-
dc.description.abstractWe report investigations on the degradation of GaN-based light-emitting diodes due to high dc current stress by examining two types of devices with the same fabrication procedures except for the growth conditions for the InGaN quantum wells (QWs). Higher trimethylindium and triethylgallium fluxes are used for type A devices resulting in a threefold increase in the InGaN QWs growth rate compared to type B devices. Detailed structural and optoelectronic properties of the devices are investigated by transmission electron microscopy, atomic force microscopy, thermal imaging, I-V measurements, and the low-frequency noise properties of the devices as a function of the stress time, t S. The experimental data show that the QWs in type B devices are dominated by spiral growth and they have substantially higher strain nonuniformity than type A devices. The highly strained GaN/InGaN interfaces in device B are also responsible for the faster increase in the defect density due to hot-electron injection. The defects enhance the trap-assisted tunneling in the multiple quantum wells (MQWs) resulting in the development of hot spots among type B devices after high current stressing of the MQWs. This in turn leads to an increase in the defect generation rate resulting in a thermal run-away condition that ultimately resulted in the failure of the device. The data show that an increase in the growth rate in the InGaN layer led to the domination by the step flow growth mode over the spiral growth mode in the MQWs. This is the main reason for the reduction in the dislocation density in type A devices and hence their increase in device reliability. © 2010 American Institute of Physics.en_HK
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.subjectAtomic Force Microscopyen_US
dc.subjectDefect Densityen_US
dc.subjectDefectsen_US
dc.subjectDegradationen_US
dc.subjectGallium Alloysen_US
dc.subjectGallium Nitrideen_US
dc.subjectInfrared Imagingen_US
dc.subjectLight Emissionen_US
dc.subjectLight Emitting Diodesen_US
dc.subjectOrganic Light Emitting Diodes (Oled)en_US
dc.subjectScanning Electron Microscopyen_US
dc.subjectTransmission Electron Microscopyen_US
dc.titlePhysical mechanisms for hot-electron degradation in GaN light-emitting diodesen_HK
dc.typeArticleen_HK
dc.identifier.emailChan, PKL:pklc@hku.hken_HK
dc.identifier.authorityChan, PKL=rp01532en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.3357312en_HK
dc.identifier.scopuseid_2-s2.0-77951525224en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77951525224&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume107en_HK
dc.identifier.issue7en_HK
dc.identifier.isiWOS:000276795400004-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLeung, KK=7401860414en_HK
dc.identifier.scopusauthoridFong, WK=7102815889en_HK
dc.identifier.scopusauthoridChan, PKL=35742829700en_HK
dc.identifier.scopusauthoridSurya, C=7003939256en_HK

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