File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Hot-electron induced degradations in GaN-based LEDs fabricated on nanoscale epitaxial lateral overgrown layers

TitleHot-electron induced degradations in GaN-based LEDs fabricated on nanoscale epitaxial lateral overgrown layers
Authors
KeywordsGaN
Low-frequency noise
MQWs
Nano-ELO
Thermoreflectance
Issue Date2011
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid-State Electronics, 2011, v. 62 n. 1, p. 94-98 How to Cite?
AbstractWe report investigations on the hot-electron hardness of GaN-based multiple quantum wells (MQWs) fabricated on nanoscale epitaxial lateral overgrown (NELO) GaN layers. This layer was deposited using a SiO 2 growth mask with nanometer-scale windows. The active regions of the devices consist of five-period GaN/InGaN MQWs. Structural analyses of the material indicate significant reduction in the threading dislocation density of the devices compared to the control which were fabricated without the use of the NELO GaN layers. The hot-electron degradation of the devices due to the application of a large dc. current was characterized by detailed examination of the electroluminescence (EL), I-V, thermoreflectance and the current noise power spectra of the devices as a function of the stress time. Significant improvements in the hot-electron hardness were observed in the device compared to the control. © 2011 Elsevier Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/141688
ISSN
2015 Impact Factor: 1.345
2015 SCImago Journal Rankings: 0.675
ISI Accession Number ID
Funding AgencyGrant Number
RGCPolyU 5302/09E
Hong Kong Polytechnic University
Funding Information:

This work is supported in part by an RGC Grant (PolyU 5302/09E). Further support is provided by a Niche area grant of the Hong Kong Polytechnic University.

References

 

DC FieldValueLanguage
dc.contributor.authorZhang, ZWen_HK
dc.contributor.authorZhu, CFen_HK
dc.contributor.authorFong, WKen_HK
dc.contributor.authorLeung, KKen_HK
dc.contributor.authorChan, PKLen_HK
dc.contributor.authorSurya, Cen_HK
dc.date.accessioned2011-09-27T02:58:10Z-
dc.date.available2011-09-27T02:58:10Z-
dc.date.issued2011en_HK
dc.identifier.citationSolid-State Electronics, 2011, v. 62 n. 1, p. 94-98en_HK
dc.identifier.issn0038-1101en_HK
dc.identifier.urihttp://hdl.handle.net/10722/141688-
dc.description.abstractWe report investigations on the hot-electron hardness of GaN-based multiple quantum wells (MQWs) fabricated on nanoscale epitaxial lateral overgrown (NELO) GaN layers. This layer was deposited using a SiO 2 growth mask with nanometer-scale windows. The active regions of the devices consist of five-period GaN/InGaN MQWs. Structural analyses of the material indicate significant reduction in the threading dislocation density of the devices compared to the control which were fabricated without the use of the NELO GaN layers. The hot-electron degradation of the devices due to the application of a large dc. current was characterized by detailed examination of the electroluminescence (EL), I-V, thermoreflectance and the current noise power spectra of the devices as a function of the stress time. Significant improvements in the hot-electron hardness were observed in the device compared to the control. © 2011 Elsevier Ltd. All rights reserved.en_HK
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_HK
dc.relation.ispartofSolid-State Electronicsen_HK
dc.subjectGaNen_HK
dc.subjectLow-frequency noiseen_HK
dc.subjectMQWsen_HK
dc.subjectNano-ELOen_HK
dc.subjectThermoreflectanceen_HK
dc.titleHot-electron induced degradations in GaN-based LEDs fabricated on nanoscale epitaxial lateral overgrown layersen_HK
dc.typeArticleen_HK
dc.identifier.emailChan, PKL:pklc@hku.hken_HK
dc.identifier.authorityChan, PKL=rp01532en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/j.sse.2011.02.007en_HK
dc.identifier.scopuseid_2-s2.0-79957939652en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79957939652&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume62en_HK
dc.identifier.issue1en_HK
dc.identifier.spage94en_HK
dc.identifier.epage98en_HK
dc.identifier.isiWOS:000292444000016-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridZhang, ZW=40662214700en_HK
dc.identifier.scopusauthoridZhu, CF=16200484400en_HK
dc.identifier.scopusauthoridFong, WK=7102815889en_HK
dc.identifier.scopusauthoridLeung, KK=7401860414en_HK
dc.identifier.scopusauthoridChan, PKL=35742829700en_HK
dc.identifier.scopusauthoridSurya, C=7003939256en_HK

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats