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Conference Paper: Properties of Si-SiO2 interface traps due to low-energy Ar+ backsurface bombardment in n-channel nitrided MOSFETs

TitleProperties of Si-SiO2 interface traps due to low-energy Ar+ backsurface bombardment in n-channel nitrided MOSFETs
Authors
KeywordsElectronics
Issue Date1996
PublisherIEEE.
Citation
I E E E Hong Kong Electron Devices Meeting Proceedings, Hong Kong, China, 29 June 1996, p. 77-80 How to Cite?
AbstractFlicker noise in backsurface gettered, nitrided n-channel MOSFETs is characterized over a wide range of temperatures and biases. The gettering time ranged from 10 to 40 minutes. The noise power spectra for devices with different gettering times are compared to the ungettered devices which serve as the control. It is found that flicker noise is reduced by backsurface gettering for short gettering times. A rebound in the noise magnitude is observed for long gettering times. Investigations of the temperature dependencies of the noise power spectra indicates that the low-frequency noise arises from thermal activation of carriers to traps at the Si-SiO2 interface. Backsurface gettering results in the modification of the energy distribution of the interface traps, probably due to stress relaxation at the Si-SiO2 interface.
Persistent Identifierhttp://hdl.handle.net/10722/45878
ISBN

 

DC FieldValueLanguage
dc.contributor.authorSurya, Cen_HK
dc.contributor.authorWang, Wen_HK
dc.contributor.authorFong, WKen_HK
dc.contributor.authorChan, CHen_HK
dc.contributor.authorLai, PTen_HK
dc.date.accessioned2007-10-30T06:37:34Z-
dc.date.available2007-10-30T06:37:34Z-
dc.date.issued1996en_HK
dc.identifier.citationI E E E Hong Kong Electron Devices Meeting Proceedings, Hong Kong, China, 29 June 1996, p. 77-80en_HK
dc.identifier.isbn0780330919-
dc.identifier.urihttp://hdl.handle.net/10722/45878-
dc.description.abstractFlicker noise in backsurface gettered, nitrided n-channel MOSFETs is characterized over a wide range of temperatures and biases. The gettering time ranged from 10 to 40 minutes. The noise power spectra for devices with different gettering times are compared to the ungettered devices which serve as the control. It is found that flicker noise is reduced by backsurface gettering for short gettering times. A rebound in the noise magnitude is observed for long gettering times. Investigations of the temperature dependencies of the noise power spectra indicates that the low-frequency noise arises from thermal activation of carriers to traps at the Si-SiO2 interface. Backsurface gettering results in the modification of the energy distribution of the interface traps, probably due to stress relaxation at the Si-SiO2 interface.en_HK
dc.format.extent249212 bytes-
dc.format.extent6324 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.relation.ispartofI E E E Hong Kong Electron Devices Meeting Proceedingsen_HK
dc.rightsI E E E Hong Kong Electron Devices Meeting Proceedings. Copyright © I E E E.en_HK
dc.rights©1996 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectElectronicsen_HK
dc.titleProperties of Si-SiO2 interface traps due to low-energy Ar+ backsurface bombardment in n-channel nitrided MOSFETsen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/HKEDM.1996.566320en_HK
dc.identifier.scopuseid_2-s2.0-0030395118en_HK
dc.identifier.hkuros12537-
dc.identifier.hkuros240626-
dc.identifier.spage77en_HK
dc.identifier.epage80en_HK
dc.identifier.scopusauthoridSurya, Charles=7003939256en_HK
dc.identifier.scopusauthoridWang, W=7501758811en_HK
dc.identifier.scopusauthoridFong, WK=7102815889en_HK
dc.identifier.scopusauthoridChan, CH=36984588600en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK

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