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Article: Fabrication and characterization of indium-tin-oxide/GaN visible-blind UV detectors

TitleFabrication and characterization of indium-tin-oxide/GaN visible-blind UV detectors
Authors
Issue Date2006
PublisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www3.interscience.wiley.com/cgi-bin/jhome/102519628
Citation
Physica Status Solidi (C) Current Topics In Solid State Physics, 2006, v. 3, p. 2295-2298 How to Cite?
AbstractWe report the fabrication and characterization of visible-blind GaN-based UV photodetectors with indium-tin-oxide (ITO)/GaN Schottky junctions. We have systematically studied the optimal growth conditions for the ITO layers. Responsivity of 0.041 A/W was obtained for the optimised ITO/GaN UV detectors at 350nm. The I-V characteristics show that the reverse leakage currents of the devices are strongly dependent on the deposition conditions of the ITO. The experimental results indicate that interfacial traps play an important role on the optoelectronic properties of the devices. To improve the ITO/GaN interface, a thin Ni layer was deposited between the ITO and the GaN. Our results show that this leads to significant improvements in the leakage current, low-frequency excess noise and the UV-to-visible rejection ratio. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.
Persistent Identifierhttp://hdl.handle.net/10722/80441
ISSN
2015 SCImago Journal Rankings: 0.392
References

 

DC FieldValueLanguage
dc.contributor.authorLui, HFen_HK
dc.contributor.authorFong, WKen_HK
dc.contributor.authorSurya, Cen_HK
dc.contributor.authorCheung, CHen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.date.accessioned2010-09-06T08:06:29Z-
dc.date.available2010-09-06T08:06:29Z-
dc.date.issued2006en_HK
dc.identifier.citationPhysica Status Solidi (C) Current Topics In Solid State Physics, 2006, v. 3, p. 2295-2298en_HK
dc.identifier.issn1862-6351en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80441-
dc.description.abstractWe report the fabrication and characterization of visible-blind GaN-based UV photodetectors with indium-tin-oxide (ITO)/GaN Schottky junctions. We have systematically studied the optimal growth conditions for the ITO layers. Responsivity of 0.041 A/W was obtained for the optimised ITO/GaN UV detectors at 350nm. The I-V characteristics show that the reverse leakage currents of the devices are strongly dependent on the deposition conditions of the ITO. The experimental results indicate that interfacial traps play an important role on the optoelectronic properties of the devices. To improve the ITO/GaN interface, a thin Ni layer was deposited between the ITO and the GaN. Our results show that this leads to significant improvements in the leakage current, low-frequency excess noise and the UV-to-visible rejection ratio. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.en_HK
dc.languageengen_HK
dc.publisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www3.interscience.wiley.com/cgi-bin/jhome/102519628en_HK
dc.relation.ispartofPhysica Status Solidi (C) Current Topics in Solid State Physicsen_HK
dc.titleFabrication and characterization of indium-tin-oxide/GaN visible-blind UV detectorsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1610-1634&volume=3&spage=2295&epage=2298&date=2006&atitle=Fabrication+and+characterization+of+indium-tin-oxide/GaN+visible-blind+UV+detectorsen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/pssc.200565358en_HK
dc.identifier.scopuseid_2-s2.0-33746323952en_HK
dc.identifier.hkuros116998en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33746323952&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume3en_HK
dc.identifier.spage2295en_HK
dc.identifier.epage2298en_HK
dc.publisher.placeGermanyen_HK
dc.identifier.scopusauthoridLui, HF=26538977800en_HK
dc.identifier.scopusauthoridFong, WK=7102815889en_HK
dc.identifier.scopusauthoridSurya, C=7003939256en_HK
dc.identifier.scopusauthoridCheung, CH=8618960900en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK

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