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Article: Degradation mechanism of GaN-based LEDs with different growth parameters

TitleDegradation mechanism of GaN-based LEDs with different growth parameters
Authors
KeywordsGallium Alloys
Gallium Nitride
Semiconductor Devices
Semiconductor Growth
Semiconductor Quantum Wells
Issue Date2010
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
Materials Research Society Symposium Proceedings, 2010, v. 1195, p. 207-212 How to Cite?
AbstractWe investigated the degradation mechanism of GaN LEDs due to the application of a high d.c. stressing current. To identify the underlying process for device failure we examined the effects of the InGaN quantum well growth parameters on the hot-electron hardness of the devices. Systematic characterizations on the degradations in the microstructural, thermoreflectance, and low frequency noise properties of the devices were performed. © 2010 Materials Research Society.
Persistent Identifierhttp://hdl.handle.net/10722/141695
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorLeung, KKen_HK
dc.contributor.authorFong, WKen_HK
dc.contributor.authorChan, PKLen_HK
dc.contributor.authorSurya, Cen_HK
dc.date.accessioned2011-09-27T02:58:16Z-
dc.date.available2011-09-27T02:58:16Z-
dc.date.issued2010en_HK
dc.identifier.citationMaterials Research Society Symposium Proceedings, 2010, v. 1195, p. 207-212en_HK
dc.identifier.issn0272-9172en_HK
dc.identifier.urihttp://hdl.handle.net/10722/141695-
dc.description.abstractWe investigated the degradation mechanism of GaN LEDs due to the application of a high d.c. stressing current. To identify the underlying process for device failure we examined the effects of the InGaN quantum well growth parameters on the hot-electron hardness of the devices. Systematic characterizations on the degradations in the microstructural, thermoreflectance, and low frequency noise properties of the devices were performed. © 2010 Materials Research Society.en_HK
dc.languageengen_US
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_HK
dc.relation.ispartofMaterials Research Society Symposium Proceedingsen_HK
dc.subjectGallium Alloysen_US
dc.subjectGallium Nitrideen_US
dc.subjectSemiconductor Devicesen_US
dc.subjectSemiconductor Growthen_US
dc.subjectSemiconductor Quantum Wellsen_US
dc.titleDegradation mechanism of GaN-based LEDs with different growth parametersen_HK
dc.typeArticleen_HK
dc.identifier.emailChan, PKL:pklc@hku.hken_HK
dc.identifier.authorityChan, PKL=rp01532en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-78049349834en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-78049349834&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume1195en_HK
dc.identifier.spage207en_HK
dc.identifier.epage212en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLeung, KK=7401860414en_HK
dc.identifier.scopusauthoridFong, WK=7102815889en_HK
dc.identifier.scopusauthoridChan, PKL=35742829700en_HK
dc.identifier.scopusauthoridSurya, C=7003939256en_HK

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