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Article: Degradation mechanism of GaN-based LEDs with different growth parameters

TitleDegradation mechanism of GaN-based LEDs with different growth parameters
Authors
Leung, KKFong, WKChan, PKLSurya, C
KeywordsGallium Alloys
Gallium Nitride
Semiconductor Devices
Semiconductor Growth
Semiconductor Quantum Wells
Issue Date2010
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
Materials Research Society Symposium Proceedings, 2010, v. 1195, p. 207-212 How to Cite?
AbstractWe investigated the degradation mechanism of GaN LEDs due to the application of a high d.c. stressing current. To identify the underlying process for device failure we examined the effects of the InGaN quantum well growth parameters on the hot-electron hardness of the devices. Systematic characterizations on the degradations in the microstructural, thermoreflectance, and low frequency noise properties of the devices were performed. © 2010 Materials Research Society.
Persistent Identifierhttp://hdl.handle.net/10722/141695
ISSN
0272-9172
2019 SCImago Journal Rankings: 0.114
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLeung, KKen_HK
dc.contributor.authorFong, WKen_HK
dc.contributor.authorChan, PKLen_HK
dc.contributor.authorSurya, Cen_HK
dc.date.accessioned2011-09-27T02:58:16Z-
dc.date.available2011-09-27T02:58:16Z-
dc.date.issued2010en_HK
dc.identifier.citationMaterials Research Society Symposium Proceedings, 2010, v. 1195, p. 207-212en_HK
dc.identifier.issn0272-9172en_HK
dc.identifier.urihttp://hdl.handle.net/10722/141695-
dc.description.abstractWe investigated the degradation mechanism of GaN LEDs due to the application of a high d.c. stressing current. To identify the underlying process for device failure we examined the effects of the InGaN quantum well growth parameters on the hot-electron hardness of the devices. Systematic characterizations on the degradations in the microstructural, thermoreflectance, and low frequency noise properties of the devices were performed. © 2010 Materials Research Society.en_HK
dc.languageengen_US
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_HK
dc.relation.ispartofMaterials Research Society Symposium Proceedingsen_HK
dc.subjectGallium Alloysen_US
dc.subjectGallium Nitrideen_US
dc.subjectSemiconductor Devicesen_US
dc.subjectSemiconductor Growthen_US
dc.subjectSemiconductor Quantum Wellsen_US
dc.titleDegradation mechanism of GaN-based LEDs with different growth parametersen_HK
dc.typeArticleen_HK
dc.identifier.emailChan, PKL:pklc@hku.hken_HK
dc.identifier.authorityChan, PKL=rp01532en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-78049349834en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-78049349834&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume1195en_HK
dc.identifier.spage207en_HK
dc.identifier.epage212en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLeung, KK=7401860414en_HK
dc.identifier.scopusauthoridFong, WK=7102815889en_HK
dc.identifier.scopusauthoridChan, PKL=35742829700en_HK
dc.identifier.scopusauthoridSurya, C=7003939256en_HK
dc.identifier.issnl0272-9172-

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