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Title	Author(s)	Issue Date
Carbon-doped GaInP/GaAs double heterostructure-emitter bipolar transistors with high current gain Journal:IEEE Transactions on Electron Devices	Yang, YF Hsu, CC Yang, ES	1995
Carbon-doped GaInP/GaAs heterojunction bipolar transistors grown by metalorganic chemical vapor deposition using nitrogen as the carrier gas Journal:Applied Physics Letters	Hsu, CC Yang, YF Ou, HJ Yang, ES Lo, HB	1997
CCl4-doped semi-insulating InP as a buffer layer in GaInAs/InP high electron mobility transistors Journal:Applied Physics Letters	Hsu, CC Yang, YF Ou, HJ Yang, ES	1996
Fabrication and characteristics of a GaInP/GaAs heterojunction bipolar transistor using a selective buried sub-collector Journal:IEEE Transactions on Electron Devices	Yang, YF Hsu, CC Ou, HJ Huang, TC Yang, ES	1997
High efficiency, low offset voltage InGaP/GaAs power heterostructure-emitter bipolar transistors with advanced thermal management Journal:IEEE Transactions on Electron Devices	Yan, BP Yang, ES Yang, YF Wang, XQ Hsu, CC	2003
High frequency and low noise C-doped GalnP/GaAs heterojunction bipolar transistor grown by MOCVD using TBA and TBP Journal:Electronics Letters	Yang, YF Hsu, CC Yang, ES	1996
High frequency GalnP/GaAs heterostructure-emitter bipolar transistor with low offset voltage Journal:Electronics Letters	Ou, HJ Hsu, CC Yang, YF Yang, ES	1997
A high-frequency GaInP/GaAs heterojunction bipolar transistor with reduced base-collector capacitance using a selective buried sub-collector Journal:IEEE Electron Device Letters	Yang, YF Hsu, CC Yang, ES Ou, HJ	1996
Improvement of SiGe oxide grown by electron cyclotron resonance using H2O vapor annealing Journal:Applied Physics Letters	Tchikatilov, D Yang, YF Yang, ES	1996
InGaP/GaAs power heterostructure-emitter bipolar transistor Journal:Electronics Letters	Yan, BP Yang, ES Yang, YF Wang, XQ Hsu, CC	2001
Integration of GaInP/GaAs heterojunction bipolar transistors and high electron mobility transistors Journal:IEEE Electron Device Letters	Yang, YF Hsu, CC Yang, ES	1996
Modeling of current gain's temperature dependence in heterostructure-emitter bipolar transistors Journal:IEEE Transactions on Electron Devices	Yang, ES Hsu, CC Lo, HB Yang, YF	2000
Prevention of base dopant out-diffusion using a heterostructure-emitter in GaInP/GaAs heterojunction bipolar transistors Journal:Semiconductor Science and Technology	Yang, YF Hsu, CC Yang, ES	1995
Pseudomorphic Ga0.2In0.8P/Ga0.47In0.53As/InP HEMT grown by MOVPE using TBP and TBA Journal:Electronics Letters	Yang, YF Hsu, CC Yang, ES	1994
Reactive ion etching of gallium nitride using hydrogen bromide plasmas Journal:Electronics Letters	Ping, AT Adesida, I Asif Khan, M Kuznia, JN Yang, YF Yang, ES	1994
A reliability comparison of InGaP/GaAs HBTs with and without passivation ledge Journal:Microelectronics Reliability	Van, BP Yang, YF Hsu, CC Lo, HB Yang, ES	2001
SiGe pMOSFET's with gate oxide fabricated by microwave electron cyclotron resonance plasma processing Journal:IEEE Electron Device Letters	Li, PW Yang, ES Yang, YF Chu, JO Meyerson, BS	1994
State holding circuit using heterojunction bipolar transistors and resonant tunnelling diodes Journal:Electronics Letters	Yang, YF Wang, WI Yang, ES	1994
Surface recombination current in InGaP/GaAs heterostructure-emitter bipolar transistors Journal:IEEE Transactions on Electron Devices	Yang, YF Hsu, CC Yang, ES	1994
Temperature dependence of current gain of GalnP/GaAs heteroj unction and heterostructure-emitter bipolar transistors Journal:IEEE Transactions on Electron Devices	Yang, ES Yang, YF Hsu, CC Ou, HJ Lo, HB	1999

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