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Article: SiGe pMOSFET's with gate oxide fabricated by microwave electron cyclotron resonance plasma processing

TitleSiGe pMOSFET's with gate oxide fabricated by microwave electron cyclotron resonance plasma processing
Authors
Li, PWYang, ESYang, YFChu, JOMeyerson, BS
Issue Date1994
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55
Citation
Ieee Electron Device Letters, 1994, v. 15 n. 10, p. 402-405 How to Cite?
DOI: http://dx.doi.org/10.1109/55.320982
AbstractA new process, electron cyclotron resonance (ECR) microwave plasma oxidation, has been developed to produce a gate-quality oxide directly on SiGe alloys. One μm Al gate Si 0.86Ge 0.15 p-metal-oxide-semiconductor field-effect-transistors (pMOSFET's) with ECR-grown gate oxide have been fabricated. It is found that saturation transconductance increases from 48 mS/mm at 300 K to 60 mS/mm at 77 K. Low field hole mobilities of 167 cm 2/V-s at 300 K and 530 cm 2/V-s at 77 K have been obtained.
Persistent Identifierhttp://hdl.handle.net/10722/155010
ISSN
0741-3106
2021 Impact Factor: 4.816
2020 SCImago Journal Rankings: 1.337
ISI Accession Number ID
WOS:A1994PL26900011

 

DC FieldValueLanguage
dc.contributor.authorLi, PWen_US
dc.contributor.authorYang, ESen_US
dc.contributor.authorYang, YFen_US
dc.contributor.authorChu, JOen_US
dc.contributor.authorMeyerson, BSen_US
dc.date.accessioned2012-08-08T08:31:30Z-
dc.date.available2012-08-08T08:31:30Z-
dc.date.issued1994en_US
dc.identifier.citationIeee Electron Device Letters, 1994, v. 15 n. 10, p. 402-405en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://hdl.handle.net/10722/155010-
dc.description.abstractA new process, electron cyclotron resonance (ECR) microwave plasma oxidation, has been developed to produce a gate-quality oxide directly on SiGe alloys. One μm Al gate Si 0.86Ge 0.15 p-metal-oxide-semiconductor field-effect-transistors (pMOSFET's) with ECR-grown gate oxide have been fabricated. It is found that saturation transconductance increases from 48 mS/mm at 300 K to 60 mS/mm at 77 K. Low field hole mobilities of 167 cm 2/V-s at 300 K and 530 cm 2/V-s at 77 K have been obtained.en_US
dc.languageengen_US
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55en_US
dc.relation.ispartofIEEE Electron Device Lettersen_US
dc.titleSiGe pMOSFET's with gate oxide fabricated by microwave electron cyclotron resonance plasma processingen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/55.320982en_US
dc.identifier.scopuseid_2-s2.0-0028530427en_US
dc.identifier.volume15en_US
dc.identifier.issue10en_US
dc.identifier.spage402en_US
dc.identifier.epage405en_US
dc.identifier.isiWOS:A1994PL26900011-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridLi, PW=7404773352en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridYang, YF=7409383278en_US
dc.identifier.scopusauthoridChu, JO=7402881146en_US
dc.identifier.scopusauthoridMeyerson, BS=7103196184en_US
dc.identifier.issnl0741-3106-

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