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Article: Reactive ion etching of gallium nitride using hydrogen bromide plasmas

TitleReactive ion etching of gallium nitride using hydrogen bromide plasmas
Authors
Ping, ATAdesida, IAsif Khan, MKuznia, JNYang, YFYang, ES
KeywordsGallium nitride
Reactive ion etching
Issue Date1994
PublisherThe Institution of Engineering and Technology. The Journal's web site is located at http://www.ieedl.org/EL
Citation
Electronics Letters, 1994, v. 30 n. 22, p. 1895-1897 How to Cite?
DOI: http://dx.doi.org/10.1049/el:19941247
AbstractThe characteristics of the reactive ion etching (RIE) of gallium nitride (GaN) have been investigated using HBr, 1:1 HBr:Ar, and 1:1 HBr:H2 plasmas. Etch rates were found to increase with plasma self-bias voltage for all gas mixtures exceeding 60 nm/min at -400V for pure HBr. Higher etch rates were obtained for pure HBr than for HBr mixtures with Ar and H2. Chamber pressure was also found to slightly affect etch rates for the pressure ranges investigated. The anisotropy of etched profiles was found to improve with increasing pressure. Smooth etched surfaces are also demonstrated.
Persistent Identifierhttp://hdl.handle.net/10722/155008
ISSN
0013-5194
2023 Impact Factor: 0.7
2023 SCImago Journal Rankings: 0.323
ISI Accession Number ID
WOS:A1994PT07900060

 

DC FieldValueLanguage
dc.contributor.authorPing, ATen_US
dc.contributor.authorAdesida, Ien_US
dc.contributor.authorAsif Khan, Men_US
dc.contributor.authorKuznia, JNen_US
dc.contributor.authorYang, YFen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:31:29Z-
dc.date.available2012-08-08T08:31:29Z-
dc.date.issued1994en_US
dc.identifier.citationElectronics Letters, 1994, v. 30 n. 22, p. 1895-1897en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://hdl.handle.net/10722/155008-
dc.description.abstractThe characteristics of the reactive ion etching (RIE) of gallium nitride (GaN) have been investigated using HBr, 1:1 HBr:Ar, and 1:1 HBr:H2 plasmas. Etch rates were found to increase with plasma self-bias voltage for all gas mixtures exceeding 60 nm/min at -400V for pure HBr. Higher etch rates were obtained for pure HBr than for HBr mixtures with Ar and H2. Chamber pressure was also found to slightly affect etch rates for the pressure ranges investigated. The anisotropy of etched profiles was found to improve with increasing pressure. Smooth etched surfaces are also demonstrated.en_US
dc.languageengen_US
dc.publisherThe Institution of Engineering and Technology. The Journal's web site is located at http://www.ieedl.org/ELen_US
dc.relation.ispartofElectronics Lettersen_US
dc.subjectGallium nitride-
dc.subjectReactive ion etching-
dc.titleReactive ion etching of gallium nitride using hydrogen bromide plasmasen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1049/el:19941247en_US
dc.identifier.scopuseid_2-s2.0-0028527026en_US
dc.identifier.volume30en_US
dc.identifier.issue22en_US
dc.identifier.spage1895en_US
dc.identifier.epage1897en_US
dc.identifier.isiWOS:A1994PT07900060-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridPing, AT=7003869812en_US
dc.identifier.scopusauthoridAdesida, I=7102217695en_US
dc.identifier.scopusauthoridAsif Khan, M=7005737912en_US
dc.identifier.scopusauthoridKuznia, JN=6603144085en_US
dc.identifier.scopusauthoridYang, YF=7409383278en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.issnl0013-5194-

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