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Article: Integration of GaInP/GaAs heterojunction bipolar transistors and high electron mobility transistors

TitleIntegration of GaInP/GaAs heterojunction bipolar transistors and high electron mobility transistors
Authors
Yang, YFHsu, CCYang, ES
Issue Date1996
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55
Citation
Ieee Electron Device Letters, 1996, v. 17 n. 7, p. 363-365 How to Cite?
DOI: http://dx.doi.org/10.1109/55.506368
AbstractIntegration of carbon-doped GaInP/GaAs heterojunction bipolar transistors (HBT's) and high electron mobility transistors (HEMT's) is demonstrated by growing an HBT on the top of a HEMT. A current gain of 60. a cutoff frequency of 59 GHz and a maximum oscillation frequency of 68 GHz were obtained for a 5 × 15 μm 2 self-aligned HBT. The HEMT with a gate length of 1.5 μm has a transconductance of 210 mS/mm, a cutoff frequency of 9 GHz and a maximum oscillation frequency of 22 GHz. It is shown that the GaInP/GaAs HBT on the HEMT is the simple Bi-FET tecnology suitable for microwave and mixed single applications.
Persistent Identifierhttp://hdl.handle.net/10722/42740
ISSN
0741-3106
2021 Impact Factor: 4.816
2020 SCImago Journal Rankings: 1.337
ISI Accession Number ID
WOS:A1996UV31900015
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorYang, YFen_HK
dc.contributor.authorHsu, CCen_HK
dc.contributor.authorYang, ESen_HK
dc.date.accessioned2007-03-23T04:31:15Z-
dc.date.available2007-03-23T04:31:15Z-
dc.date.issued1996en_HK
dc.identifier.citationIeee Electron Device Letters, 1996, v. 17 n. 7, p. 363-365en_HK
dc.identifier.issn0741-3106en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42740-
dc.description.abstractIntegration of carbon-doped GaInP/GaAs heterojunction bipolar transistors (HBT's) and high electron mobility transistors (HEMT's) is demonstrated by growing an HBT on the top of a HEMT. A current gain of 60. a cutoff frequency of 59 GHz and a maximum oscillation frequency of 68 GHz were obtained for a 5 × 15 μm 2 self-aligned HBT. The HEMT with a gate length of 1.5 μm has a transconductance of 210 mS/mm, a cutoff frequency of 9 GHz and a maximum oscillation frequency of 22 GHz. It is shown that the GaInP/GaAs HBT on the HEMT is the simple Bi-FET tecnology suitable for microwave and mixed single applications.en_HK
dc.format.extent264423 bytes-
dc.format.extent4187 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55en_HK
dc.relation.ispartofIEEE Electron Device Lettersen_HK
dc.rights©1996 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.titleIntegration of GaInP/GaAs heterojunction bipolar transistors and high electron mobility transistorsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0741-3106&volume=17&issue=7&spage=363&epage=365&date=1996&atitle=Integration+of+GalnP/GaAs+heterojunction+bipolar+transistors+and+high+electron+mobility+transistorsen_HK
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_HK
dc.identifier.authorityYang, ES=rp00199en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/55.506368en_HK
dc.identifier.scopuseid_2-s2.0-0030182122en_HK
dc.identifier.hkuros26930-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0030182122&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume17en_HK
dc.identifier.issue7en_HK
dc.identifier.spage363en_HK
dc.identifier.epage365en_HK
dc.identifier.isiWOS:A1996UV31900015-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridYang, YF=7409390165en_HK
dc.identifier.scopusauthoridHsu, CC=7404947020en_HK
dc.identifier.scopusauthoridYang, ES=7202021229en_HK
dc.identifier.issnl0741-3106-

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