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Article: State holding circuit using heterojunction bipolar transistors and resonant tunnelling diodes

TitleState holding circuit using heterojunction bipolar transistors and resonant tunnelling diodes
Authors
Yang, YFWang, WIYang, ES
KeywordsHeterojunction bipolar transistors
Resonant tunnelling devices
Sample and hold circuits
Issue Date1994
PublisherThe Institution of Engineering and Technology. The Journal's web site is located at http://www.ieedl.org/EL
Citation
Electronics Letters, 1994, v. 30 n. 1, p. 90-92 How to Cite?
DOI: http://dx.doi.org/10.1049/el:19940008
AbstractA state holding circuit, similar to the Muller C-element used as a latch, a register or a counter, has been successfully fabricated using GaAs/AlGaAs heterostructures grown by molecular beam epitaxy (MBE). Using the negative resistance in a resonant tunnel diode, the circuit has a simpler configuration than the C-element and a potential for use in high speed circuits.
Persistent Identifierhttp://hdl.handle.net/10722/155013
ISSN
0013-5194
2023 Impact Factor: 0.7
2023 SCImago Journal Rankings: 0.323
ISI Accession Number ID
WOS:A1994MT57700063

 

DC FieldValueLanguage
dc.contributor.authorYang, YFen_US
dc.contributor.authorWang, WIen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:31:30Z-
dc.date.available2012-08-08T08:31:30Z-
dc.date.issued1994en_US
dc.identifier.citationElectronics Letters, 1994, v. 30 n. 1, p. 90-92en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://hdl.handle.net/10722/155013-
dc.description.abstractA state holding circuit, similar to the Muller C-element used as a latch, a register or a counter, has been successfully fabricated using GaAs/AlGaAs heterostructures grown by molecular beam epitaxy (MBE). Using the negative resistance in a resonant tunnel diode, the circuit has a simpler configuration than the C-element and a potential for use in high speed circuits.en_US
dc.languageengen_US
dc.publisherThe Institution of Engineering and Technology. The Journal's web site is located at http://www.ieedl.org/ELen_US
dc.relation.ispartofElectronics Lettersen_US
dc.subjectHeterojunction bipolar transistors-
dc.subjectResonant tunnelling devices-
dc.subjectSample and hold circuits-
dc.titleState holding circuit using heterojunction bipolar transistors and resonant tunnelling diodesen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1049/el:19940008en_US
dc.identifier.scopuseid_2-s2.0-0028766208en_US
dc.identifier.volume30en_US
dc.identifier.issue1en_US
dc.identifier.spage90en_US
dc.identifier.epage92en_US
dc.identifier.isiWOS:A1994MT57700063-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridYang, YF=7409383278en_US
dc.identifier.scopusauthoridWang, WI=7501757397en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.issnl0013-5194-

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