Browsing "Department of Electrical & Electronic Engineering" by Author tang, wm

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TitleAuthor(s)Issue Date
 
A 2-D analytical threshold-voltage model for GeOI/GeON MOSFET with high-k gate dielectric
Journal:Microelectronics Reliability
JI, FXU, JPLIU, LTANG, WMLai, PT
2016
 
A comparative study of Hf and Ta incorporations in the dielectric of Pd-WO3-SiC Schottky-diode hydrogen sensor
Journal:Sensors and Actuators B: Chemical
LIU, YTang, WMLai, PT
2018
 
A Study on La Incorporation in Transition-Metal (Y, Zr, and Nb) Oxides as Gate Dielectric of Pentacene Organic Thin-Film Transistor
Journal:IEEE Transactions on Electron Devices
HAN, CTang, WMLeung, CHChe, CMLai, PT
2015
 
A Study on Organic Thin-Film Transistors Using Hf–La Oxides With Different La Contents as Gate Dielectrics
Journal:IEEE Transactions on Electron Devices
HAN, CMA, YTang, WMWang, XLLai, PT
2018
 
A Study on Pentacene Organic Thin-Film Transistor With Different Gate Materials on Various Substrates
Journal:IEEE Electron Device Letters
HAN, CMa, YXTang, WMWang, XLLai, PT
2017
 
Advances in La-Based High-k Dielectrics for MOS Applications
Journal:Coatings
LIU, LTANG, WMLai, PT
2019
 
Analytical modeling of nonideal Schottky diode with series and shunt resistance and application in hydrogen gas sensors
Journal:physica status solidi (a)
LIU, YTang, WMLai, PT
2016
 
Anti-Screening Effect of Gate-Electrode Holes on Remote Phonon Scattering in InGaZnO Thin-Film Transistors
Journal:IEEE Transactions on Electron Devices
SU, HTang, WMLai, PT
2022
 
A comparison of MISiC Schottky-diode hydrogen sensors made by NO, N 2O, or NH 3 nitridations
Journal:IEEE Transactions on Electron Devices
Tang, WMLai, PTLeung, CHXu, JP
2006
 
Configurable NbOx Memristors as Artificial Synapses or Neurons Achieved by Regulating the Forming Compliance Current for the Spiking Neural Network
Journal:Advanced Electronic Materials
Han, CYFang, SLCui, YLLiu, WHFan, SQHuang, XDLi, XWang, XLZhang, GHTang, WMLai, PTLiu, JWan, XJYu, ZGeng, L
17-Apr-2023
 
Correlation between carrier mobility of pentacene thin-film transistor and surface passivation of its gate dielectric
Journal:Journal of Applied Physics
Cheng, KHTang, WMDeng, LFLeung, CHLai, PTChe, CM
2008
 
Damage-free mica/MoS2 interface for high-performance multilayer MoS2 field-effect transistors
Journal:Nanotechnology
Zou, XXu, JLiu, LWang, HLai, PTTang, WM
2019
 
Dependence of sensing performance of OTFT-based H2 sensor on channel length
Journal:International Journal of Hydrogen Energy
LI, BLai, PTTang, WM
2021
 
Determination of Optimal Insulaor Thickness for MISiC Hydrogen Sensors
Journal:Solid-state electronics
Xu, J PLai, PTHan, BTang, WM
2004
 
Determination of optimal insulator thickness for MISiC hydrogen sensors
Proceeding/Conference:Solid-State Electronics
Xu, JPLai, PTHan, BTang, WM
2004
 
Effective passivation of HfO2/Ge interface by using nitrided germanate as passivation interlayer
Journal:physica status solidi (a)
Cheng, ZXXu, JPLiu, LHuang, YLai, PTTang, WM
2017
 
Effects of a Gate-Electrode/Gate-Dielectric Interlayer on Carrier Mobility for Pentacene Organic Thin-Film Transistors
Journal:IEEE Electron Device Letters
MA, YXTANG, WMLai, PT
2018
 
Effects of annealing on electrical performance of multilayer MoS2 transistors with atomic layer deposited HfO2 gate dielectric
Journal:Applied Physics Express
Wen, MXu, JPLiu, LLai, PTTang, WM
2016
 
Effects of annealing temperature on sensing properties of Pt/HfO2/SiC Schottky-diode hydrogen sensor
Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits Proceedings
Tang, WMLeung, CHLai, PT
2008
 
Effects of Catalytic-Electrode Thickness on a Hydrogen Sensor Based on Organic Thin-Film Transistor
Journal:Physica Status Solidi A: Applications and Materials Science
LI, BLai, PTTang, WM
2018
Showing results 1 to 20 of 106  next >