File Download
There are no files associated with this item.
Links for fulltext
(May Require Subscription)
- Publisher Website: 10.1016/j.ijhydene.2021.02.125
- Scopus: eid_2-s2.0-85103370205
- WOS: WOS:000646740800009
- Find via
Supplementary
- Citations:
- Appears in Collections:
Article: Dependence of sensing performance of OTFT-based H2 sensor on channel length
Title | Dependence of sensing performance of OTFT-based H2 sensor on channel length |
---|---|
Authors | |
Keywords | Channel length H2 sensor Pentacene organic thin-film transistor (OTFT) |
Issue Date | 2021 |
Publisher | Elsevier. The Journal's web site is located at http://www.elsevier.com/locate/ijhydene |
Citation | International Journal of Hydrogen Energy, 2021, v. 46 n. 29, p. 16232-16240 How to Cite? |
Abstract | For a hydrogen sensor based on organic thin-film transistor (OTFT) with palladium (Pd) source/drain (S/D) electrodes as the sensing medium, the effects of channel length on its sensing performance are investigated. When exposed to a fixed hydrogen concentration, the device shows lower carrier mobility for smaller channel length down to 10 μm. The involved mechanism is that for the same hydrogen-induced expansion of the S/D electrodes, the resulting compressive strain in the channel region between the S/D electrodes of the OTFT increases with decreasing channel length, leading to a larger reduction in carrier mobility and thus a higher sensitivity to hydrogen. Moreover, the response and recovery times of the sensor are hardly affected by the channel length because both are mainly governed by the diffusion of hydrogen atoms in the S/D electrodes. |
Persistent Identifier | http://hdl.handle.net/10722/305329 |
ISSN | 2023 Impact Factor: 8.1 2023 SCImago Journal Rankings: 1.513 |
ISI Accession Number ID |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | LI, B | - |
dc.contributor.author | Lai, PT | - |
dc.contributor.author | Tang, WM | - |
dc.date.accessioned | 2021-10-20T10:07:53Z | - |
dc.date.available | 2021-10-20T10:07:53Z | - |
dc.date.issued | 2021 | - |
dc.identifier.citation | International Journal of Hydrogen Energy, 2021, v. 46 n. 29, p. 16232-16240 | - |
dc.identifier.issn | 0360-3199 | - |
dc.identifier.uri | http://hdl.handle.net/10722/305329 | - |
dc.description.abstract | For a hydrogen sensor based on organic thin-film transistor (OTFT) with palladium (Pd) source/drain (S/D) electrodes as the sensing medium, the effects of channel length on its sensing performance are investigated. When exposed to a fixed hydrogen concentration, the device shows lower carrier mobility for smaller channel length down to 10 μm. The involved mechanism is that for the same hydrogen-induced expansion of the S/D electrodes, the resulting compressive strain in the channel region between the S/D electrodes of the OTFT increases with decreasing channel length, leading to a larger reduction in carrier mobility and thus a higher sensitivity to hydrogen. Moreover, the response and recovery times of the sensor are hardly affected by the channel length because both are mainly governed by the diffusion of hydrogen atoms in the S/D electrodes. | - |
dc.language | eng | - |
dc.publisher | Elsevier. The Journal's web site is located at http://www.elsevier.com/locate/ijhydene | - |
dc.relation.ispartof | International Journal of Hydrogen Energy | - |
dc.subject | Channel length | - |
dc.subject | H2 sensor | - |
dc.subject | Pentacene organic thin-film transistor (OTFT) | - |
dc.title | Dependence of sensing performance of OTFT-based H2 sensor on channel length | - |
dc.type | Article | - |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | - |
dc.identifier.authority | Lai, PT=rp00130 | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1016/j.ijhydene.2021.02.125 | - |
dc.identifier.scopus | eid_2-s2.0-85103370205 | - |
dc.identifier.hkuros | 326867 | - |
dc.identifier.volume | 46 | - |
dc.identifier.issue | 29 | - |
dc.identifier.spage | 16232 | - |
dc.identifier.epage | 16240 | - |
dc.identifier.isi | WOS:000646740800009 | - |
dc.publisher.place | United Kingdom | - |