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Conference Paper: Determination of optimal insulator thickness for MISiC hydrogen sensors

TitleDetermination of optimal insulator thickness for MISiC hydrogen sensors
Authors
Xu, JPLai, PTHan, BTang, WM
KeywordsHydrogen sensor
Metal-insulator-SiC (MISiC)
Schottky-barrier diode (SBD)
Issue Date2004
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid-State Electronics, 2004, v. 48 n. 9, p. 1673-1677 How to Cite?
DOI: http://dx.doi.org/10.1016/j.sse.2004.04.002
AbstractResponse mechanisms of hydrogen sensor based on a metal-insulator-SiC (MISiC) Schottky-barrier diode are analyzed. A physical model is established for the hydrogen sensor by combining thermionic emission with quantum-mechanical tunneling of charge carriers, and considering hydrogen-induced barrier-height modulation. Simulated results are in good agreement with experimental data. Relation between device performance and insulator thickness is investigated using the proposed model, and the optimal range of insulator thickness can be determined by taking into account the tradeoff between device sensitivity, reliability and resolution for high-temperature applications. © 2004 Elsevier Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/158429
ISSN
0038-1101
2021 Impact Factor: 1.916
2020 SCImago Journal Rankings: 0.457
ISI Accession Number ID
WOS:000222563100031
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorHan, Ben_HK
dc.contributor.authorTang, WMen_HK
dc.date.accessioned2012-08-08T08:59:34Z-
dc.date.available2012-08-08T08:59:34Z-
dc.date.issued2004en_HK
dc.identifier.citationSolid-State Electronics, 2004, v. 48 n. 9, p. 1673-1677en_US
dc.identifier.issn0038-1101en_HK
dc.identifier.urihttp://hdl.handle.net/10722/158429-
dc.description.abstractResponse mechanisms of hydrogen sensor based on a metal-insulator-SiC (MISiC) Schottky-barrier diode are analyzed. A physical model is established for the hydrogen sensor by combining thermionic emission with quantum-mechanical tunneling of charge carriers, and considering hydrogen-induced barrier-height modulation. Simulated results are in good agreement with experimental data. Relation between device performance and insulator thickness is investigated using the proposed model, and the optimal range of insulator thickness can be determined by taking into account the tradeoff between device sensitivity, reliability and resolution for high-temperature applications. © 2004 Elsevier Ltd. All rights reserved.en_HK
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_HK
dc.relation.ispartofSolid-State Electronicsen_HK
dc.subjectHydrogen sensoren_HK
dc.subjectMetal-insulator-SiC (MISiC)en_HK
dc.subjectSchottky-barrier diode (SBD)en_HK
dc.titleDetermination of optimal insulator thickness for MISiC hydrogen sensorsen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/j.sse.2004.04.002en_HK
dc.identifier.scopuseid_2-s2.0-2942659585en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-2942659585&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume48en_HK
dc.identifier.issue9en_HK
dc.identifier.spage1673en_HK
dc.identifier.epage1677en_HK
dc.identifier.isiWOS:000222563100031-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridHan, B=7401726428en_HK
dc.identifier.scopusauthoridTang, WM=24438163600en_HK
dc.identifier.issnl0038-1101-

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