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Article: Effective passivation of HfO2/Ge interface by using nitrided germanate as passivation interlayer

TitleEffective passivation of HfO2/Ge interface by using nitrided germanate as passivation interlayer
Authors
Cheng, ZXXu, JPLiu, LHuang, YLai, PTTang, WM
Keywordscapacitors
gate dielectric
Ge
HfO2
interfaces
metal-oxide semiconductors
nitrided germanate
passivation
Issue Date2017
Citation
physica status solidi (a), 2017, v. 214, p. 1600974 How to Cite?
DOI: http://dx.doi.org/10.1002/pssa.201600974
Persistent Identifierhttp://hdl.handle.net/10722/247440
ISI Accession Number ID
WOS:000403339900022

 

DC FieldValueLanguage
dc.contributor.authorCheng, ZX-
dc.contributor.authorXu, JP-
dc.contributor.authorLiu, L-
dc.contributor.authorHuang, Y-
dc.contributor.authorLai, PT-
dc.contributor.authorTang, WM-
dc.date.accessioned2017-10-18T08:27:17Z-
dc.date.available2017-10-18T08:27:17Z-
dc.date.issued2017-
dc.identifier.citationphysica status solidi (a), 2017, v. 214, p. 1600974-
dc.identifier.urihttp://hdl.handle.net/10722/247440-
dc.languageeng-
dc.relation.ispartofphysica status solidi (a)-
dc.subjectcapacitors-
dc.subjectgate dielectric-
dc.subjectGe-
dc.subjectHfO2-
dc.subjectinterfaces-
dc.subjectmetal-oxide semiconductors-
dc.subjectnitrided germanate-
dc.subjectpassivation-
dc.titleEffective passivation of HfO2/Ge interface by using nitrided germanate as passivation interlayer -
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1002/pssa.201600974-
dc.identifier.scopuseid_2-s2.0-85016399932-
dc.identifier.hkuros280922-
dc.identifier.volume214-
dc.identifier.spage1600974-
dc.identifier.epage1600974-
dc.identifier.isiWOS:000403339900022-

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