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Article: A Study on Organic Thin-Film Transistors Using Hf–La Oxides With Different La Contents as Gate Dielectrics

TitleA Study on Organic Thin-Film Transistors Using Hf–La Oxides With Different La Contents as Gate Dielectrics
Authors
Issue Date2018
Citation
IEEE Transactions on Electron Devices, 2018, v. 65, p. 1107-1112 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/261765
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorHAN, C-
dc.contributor.authorMA, Y-
dc.contributor.authorTang, WM-
dc.contributor.authorWang, XL-
dc.contributor.authorLai, PT-
dc.date.accessioned2018-09-28T04:47:30Z-
dc.date.available2018-09-28T04:47:30Z-
dc.date.issued2018-
dc.identifier.citationIEEE Transactions on Electron Devices, 2018, v. 65, p. 1107-1112-
dc.identifier.urihttp://hdl.handle.net/10722/261765-
dc.languageeng-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.titleA Study on Organic Thin-Film Transistors Using Hf–La Oxides With Different La Contents as Gate Dielectrics-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1109/TED.2018.2797428-
dc.identifier.hkuros292229-
dc.identifier.volume65-
dc.identifier.spage1107-
dc.identifier.epage1112-
dc.identifier.isiWOS:000425996300043-

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