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Browsing by Subject ge mos
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Showing results 1 to 10 of 10
Title
Author(s)
Issue Date
Effects of annealing gas on electrical properties and reliability of Ge MOS capacitors with HfTiON as gate dielectric
Proceeding/Conference:
IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Li, CX
Lai, PT
Xu, JP
Zou, X
2007
Effects of post deposited Annealing on Ge MOS capacitors with sub-nanometer EOT HfTiO gate dielectric
Proceeding/Conference:
IEEE International Conference of Nano/Micro Engineered and Molecular Systems (NEMS) Proceedings
Zou, X
Xu, J
Lai, PT
Li, C
2008
Gate-leakage model of Ge MOS capacitor with high-k gate dielectric
Proceeding/Conference:
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Zou, X
Xu, JP
Lai, PT
Li, CX
Zhang, XF
2007
Impact of Nitrogen Incorporation on the Interface Between Ge and La2O3 or Y2O3 Gate Dielectric: A Study on the Formation of Germanate
Journal:
IEEE Transactions on Electron Devices
Cheng, ZX
Liu, L
Xu, JP
Huang, Y
Lai, PT
Tang, WM
2016
Improved interfacial and electrical properties of HfTiON gate-dielectric Ge MOS capacitor by using LaON/Si dual passivation layer and fluorine-plasma treatment
Journal:
Applied Surface Science
Huang, Y
Xu, JP
Liu, L
Cheng, ZX
Lai, PT
Tang, WM
2019
Improved interfacial properties of Ge MOS capacitor with high-k dielectric by using TaON/GeON dual interlayer
Journal:
IEEE Electron Device Letters
Ji, F
Xu, JP
Lai, PT
Li, CX
Liu, JG
2011
Improved reliability of Ge MOS capacitor with HfTiON high-k dielelctric by using Ge surface pretreatment in wet NO
Journal:
Microelectronic Engineering
Li, CX
Lai, PT
Xu, JP
2007
Moisture-absorption-free LaTaON as gate dielectric of Ge MOS devices
Journal:
Applied Surface Science
LIU, L
CHENG, ZX
XU, JP
HUANG, Y
Lai, PT
TANG, WM
2019
N2-Plasma-Treated Ga2O3(Gd2O3) as Interface Passivation Layer for Ge MOS Capacitor With HfTiON Gate Dielectric
Journal:
IEEE Transactions on Electron Devices
Huang, Y
Xu, JP
Liu, L
Lai, PT
Tang, WM
2016
A study on fluorine incorporation in Ge p-MOS capacitors with HfTiON dielectric
Journal:
Microelectronic Engineering
Li, CX
Wang, CD
Leung, CH
Lai, PT
Xu, JP
2009
