HKU Scholars Hub: Browsing DSpace

Browsing by Author Yang, YF

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 中

or enter first few letters:

Showing results 9 to 26 of 26 < previous

	Title	Author(s)	Issue Date
	High efficiency, low offset voltage InGaP/GaAs power heterostructure-emitter bipolar transistors with advanced thermal management Journal:IEEE Transactions on Electron Devices	Yan, BP Yang, ES Yang, YF Wang, XQ Hsu, CC	2003
	High frequency and low noise C-doped GalnP/GaAs heterojunction bipolar transistor grown by MOCVD using TBA and TBP Journal:Electronics Letters	Yang, YF Hsu, CC Yang, ES	1996
	High frequency GalnP/GaAs heterostructure-emitter bipolar transistor with low offset voltage Journal:Electronics Letters	Ou, HJ Hsu, CC Yang, YF Yang, ES	1997
	A high-frequency GaInP/GaAs heterojunction bipolar transistor with reduced base-collector capacitance using a selective buried sub-collector Journal:IEEE Electron Device Letters	Yang, YF Hsu, CC Yang, ES Ou, HJ	1996
	Improvement of SiGe oxide grown by electron cyclotron resonance using H2O vapor annealing Journal:Applied Physics Letters	Tchikatilov, D Yang, YF Yang, ES	1996
	InGaP/GaAs power heterostructure-emitter bipolar transistor Journal:Electronics Letters	Yan, BP Yang, ES Yang, YF Wang, XQ Hsu, CC	2001
	Integration of GaInP/GaAs heterojunction bipolar transistors and high electron mobility transistors Journal:IEEE Electron Device Letters	Yang, YF Hsu, CC Yang, ES	1996
	Modeling of current gain's temperature dependence in heterostructure-emitter bipolar transistors Journal:IEEE Transactions on Electron Devices	Yang, ES Hsu, CC Lo, HB Yang, YF	2000
	Prevention of base dopant out-diffusion using a heterostructure-emitter in GaInP/GaAs heterojunction bipolar transistors Journal:Semiconductor Science and Technology	Yang, YF Hsu, CC Yang, ES	1995
	Pseudomorphic Ga0.2In0.8P/Ga0.47In0.53As/InP HEMT grown by MOVPE using TBP and TBA Journal:Electronics Letters	Yang, YF Hsu, CC Yang, ES	1994
	Reactive ion etching of gallium nitride using hydrogen bromide plasmas Journal:Electronics Letters	Ping, AT Adesida, I Asif Khan, M Kuznia, JN Yang, YF Yang, ES	1994
	Recent advances in rock tunnelling in China (Keynote address) Proceeding/Conference:Proceedings of the Seminar on Geotechnical Problems of Rapidly Developing Areas in China, Hong Kong Institution of Engineers, May 24, 1996	Lee, CF Wang, SJ Yang, YF	1996
	A reliability comparison of InGaP/GaAs HBTs with and without passivation ledge Journal:Microelectronics Reliability	Van, BP Yang, YF Hsu, CC Lo, HB Yang, ES	2001
	SiGe pMOSFET's with gate oxide fabricated by microwave electron cyclotron resonance plasma processing Journal:IEEE Electron Device Letters	Li, PW Yang, ES Yang, YF Chu, JO Meyerson, BS	1994
	State holding circuit using heterojunction bipolar transistors and resonant tunnelling diodes Journal:Electronics Letters	Yang, YF Wang, WI Yang, ES	1994
	Surface recombination current in InGaP/GaAs heterostructure-emitter bipolar transistors Journal:IEEE Transactions on Electron Devices	Yang, YF Hsu, CC Yang, ES	1994
	Temperature dependence of current gain of GalnP/GaAs heteroj unction and heterostructure-emitter bipolar transistors Journal:IEEE Transactions on Electron Devices	Yang, ES Yang, YF Hsu, CC Ou, HJ Lo, HB	1999
	Thermal effect on current gains of an AlGaAs/GaAs heterostructure-emitter bipolar transistor Journal:Applied Physics Letters	Lo, HB Yang, ES Yang, YF	1999

Showing results 9 to 26 of 26 < previous