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Browsing by Author HUANG, XD
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Showing results 21 to 31 of 31
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Title
Author(s)
Issue Date
Views
LaTiON/LaON as band-engineered charge-trapping layer for nonvolatile memory applications
Journal:
Applied Physics A: Materials Science and Processing
Huang, XD
Lai, PT
Sin, JKO
2012
1436
Lycium barbarum polysaccharide-glycoprotein preventative treatment ameliorates aversive
Journal:
Neural Regeneration Research
Fu, YW
Peng, YF
Huang, XD
Yang, Y
Huang, L
Xi, Y
Hu, ZF
Lin, S
So, KF
Ren, CR
2021
30
Nb-doped Ga2O3 as charge-trapping layer for nonvolatile memory applications
Journal:
Microelectronics Reliability
SHI, R
Huang, XD
Sin, JKO
Lai, PT
2016
17
Nb-Doped La2O3 as Charge-Trapping Layer for Nonvolatile Memory Applications
Journal:
IEEE Transactions on Device and Materials Reliability
Shi, RP
Huang, XD
Leung, CH
Sin, JKO
Lai, PT
2015
23
Nitrided La2O3 as charge-trapping layer for nonvolatile memory applications
Journal:
IEEE Transactions on Device and Materials Reliability
Huang, XD
Sin, JKO
Lai, PT
2012
84
Nitrided SrTiO 3 as charge-trapping layer for nonvolatile memory applications
Journal:
Applied Physics Letters
Huang, XD
Lai, PT
Liu, L
Xu, JP
2011
88
A novel MONOS memory with high-κ HfLaON as charge-storage layer
Journal:
IEEE Transactions on Device and Materials Reliability
Liu, L
Xu, JP
Ji, F
Huang, XD
Lai, PT
2011
86
Performance of nonvolatile memory by using band-engineered SrTiO 3/HfON stack as charge-trapping layer
Journal:
Microelectronics Reliability
Huang, XD
Lai, PT
Sin, JKO
2012
96
Thermal and electrical characteristics of HfLaON with different nitridation annealings
Proceeding/Conference:
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Huang, XD
Lai, PT
2010
202
Y-Doped BaTiO3 as a Charge-Trapping Layer for Nonvolatile Memory Applications
Journal:
IEEE Electron Device Letters
SHI, R
Huang, XD
Sin, JKO
Lai, PT
2016
YAlO x as inter-poly delectric for improved performance of flash-memory application
Proceeding/Conference:
2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
Huang, XD
Lai, PT
2010
68
