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Article: Nb-doped Ga2O3 as charge-trapping layer for nonvolatile memory applications

TitleNb-doped Ga2O3 as charge-trapping layer for nonvolatile memory applications
Authors
SHI, RHuang, XDSin, JKOLai, PT
KeywordsCharge trapping
High-k dielectric
Nb-doped Ga2O3
Nonvolatile memory
Issue Date2016
PublisherElsevier. The Journal's web site is located at http://www.elsevier.com/locate/microrel
Citation
Microelectronics Reliability, 2016, v. 65, p. 64-68 How to Cite?
DOI: http://dx.doi.org/10.1016/j.microrel.2016.07.148
Persistent Identifierhttp://hdl.handle.net/10722/248408
ISSN
0026-2714
2023 Impact Factor: 1.6
2023 SCImago Journal Rankings: 0.394
ISI Accession Number ID
WOS:000386983000011

 

DC FieldValueLanguage
dc.contributor.authorSHI, R-
dc.contributor.authorHuang, XD-
dc.contributor.authorSin, JKO-
dc.contributor.authorLai, PT-
dc.date.accessioned2017-10-18T08:42:43Z-
dc.date.available2017-10-18T08:42:43Z-
dc.date.issued2016-
dc.identifier.citationMicroelectronics Reliability, 2016, v. 65, p. 64-68-
dc.identifier.issn0026-2714-
dc.identifier.urihttp://hdl.handle.net/10722/248408-
dc.languageeng-
dc.publisherElsevier. The Journal's web site is located at http://www.elsevier.com/locate/microrel-
dc.relation.ispartofMicroelectronics Reliability-
dc.rightsPosting accepted manuscript (postprint): © <year>. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/-
dc.subjectCharge trapping-
dc.subjectHigh-k dielectric-
dc.subjectNb-doped Ga2O3-
dc.subjectNonvolatile memory-
dc.titleNb-doped Ga2O3 as charge-trapping layer for nonvolatile memory applications-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1016/j.microrel.2016.07.148-
dc.identifier.scopuseid_2-s2.0-84992593365-
dc.identifier.hkuros280821-
dc.identifier.volume65-
dc.identifier.spage64-
dc.identifier.epage68-
dc.identifier.isiWOS:000386983000011-
dc.publisher.placeUnited Kingdom-
dc.identifier.issnl0026-2714-

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