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Article: Nitrided SrTiO 3 as charge-trapping layer for nonvolatile memory applications
Title | Nitrided SrTiO 3 as charge-trapping layer for nonvolatile memory applications |
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Authors | |
Issue Date | 2011 |
Publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ |
Citation | Applied Physics Letters, 2011, v. 98 n. 24, article no. 242905 How to Cite? |
Abstract | Charge-trapping characteristics of SrTiO 3 with and without nitrogen incorporation were investigated based on Al/ Al 2 O 3/SrTiO 3/SiO 2 /Si (MONOS) capacitors. A Ti-silicate interlayer at the SrTiO 3/SiO 2 interface was confirmed by x-ray photoelectron spectroscopy and transmission electron microscopy. Compared with the MONOS capacitor with SrTiO 3 as charge-trapping layer (CTL), the one with nitrided SrTiO 3 showed a larger memory window (8.4 V at ±10 V sweeping voltage), higher P/E speeds (1.8 V at 1 ms +8 V) and better retention properties (charge loss of 38% after 10 4s), due to the nitrided SrTiO 3 film exhibiting higher dielectric constant, higher deep-level traps induced by nitrogen incorporation, and suppressed formation of Ti silicate between the CTL and SiO 2 by nitrogen passivation. © 2011 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/155634 |
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Huang, XD | en_US |
dc.contributor.author | Lai, PT | en_US |
dc.contributor.author | Liu, L | en_US |
dc.contributor.author | Xu, JP | en_US |
dc.date.accessioned | 2012-08-08T08:34:29Z | - |
dc.date.available | 2012-08-08T08:34:29Z | - |
dc.date.issued | 2011 | en_US |
dc.identifier.citation | Applied Physics Letters, 2011, v. 98 n. 24, article no. 242905 | - |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/155634 | - |
dc.description.abstract | Charge-trapping characteristics of SrTiO 3 with and without nitrogen incorporation were investigated based on Al/ Al 2 O 3/SrTiO 3/SiO 2 /Si (MONOS) capacitors. A Ti-silicate interlayer at the SrTiO 3/SiO 2 interface was confirmed by x-ray photoelectron spectroscopy and transmission electron microscopy. Compared with the MONOS capacitor with SrTiO 3 as charge-trapping layer (CTL), the one with nitrided SrTiO 3 showed a larger memory window (8.4 V at ±10 V sweeping voltage), higher P/E speeds (1.8 V at 1 ms +8 V) and better retention properties (charge loss of 38% after 10 4s), due to the nitrided SrTiO 3 film exhibiting higher dielectric constant, higher deep-level traps induced by nitrogen incorporation, and suppressed formation of Ti silicate between the CTL and SiO 2 by nitrogen passivation. © 2011 American Institute of Physics. | en_US |
dc.language | eng | en_US |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | en_US |
dc.relation.ispartof | Applied Physics Letters | en_US |
dc.rights | Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2011, v. 98 n. 24, article no. 242905 and may be found at https://doi.org/10.1063/1.3601473 | - |
dc.title | Nitrided SrTiO 3 as charge-trapping layer for nonvolatile memory applications | en_US |
dc.type | Article | en_US |
dc.identifier.email | Lai, PT:laip@eee.hku.hk | en_US |
dc.identifier.authority | Lai, PT=rp00130 | en_US |
dc.description.nature | published_or_final_version | en_US |
dc.identifier.doi | 10.1063/1.3601473 | en_US |
dc.identifier.scopus | eid_2-s2.0-79960569965 | en_US |
dc.identifier.hkuros | 225730 | - |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-79960569965&selection=ref&src=s&origin=recordpage | en_US |
dc.identifier.volume | 98 | en_US |
dc.identifier.issue | 24 | en_US |
dc.identifier.spage | article no. 242905 | - |
dc.identifier.epage | article no. 242905 | - |
dc.identifier.isi | WOS:000291803600066 | - |
dc.publisher.place | United States | en_US |
dc.identifier.scopusauthorid | Huang, XD=37057428400 | en_US |
dc.identifier.scopusauthorid | Lai, PT=7202946460 | en_US |
dc.identifier.scopusauthorid | Liu, L=45961196100 | en_US |
dc.identifier.scopusauthorid | Xu, JP=35754128700 | en_US |
dc.identifier.issnl | 0003-6951 | - |