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Article: Nb-Doped La2O3 as Charge-Trapping Layer for Nonvolatile Memory Applications

TitleNb-Doped La2O3 as Charge-Trapping Layer for Nonvolatile Memory Applications
Authors
Shi, RPHuang, XDLeung, CHSin, JKOLai, PT
Keywordscharge-trapping
high-k dielectric.
Nb-doped La2O3 (LaNbO)
Nonvolatile memory
Issue Date2015
PublisherIEEE.
Citation
IEEE Transactions on Device and Materials Reliability, 2015, v. 15, p. 123-126 How to Cite?
DOI: http://dx.doi.org/10.1109/TDMR.2014.2376514
Persistent Identifierhttp://hdl.handle.net/10722/217026
ISSN
1530-4388
2023 Impact Factor: 2.5
2023 SCImago Journal Rankings: 0.436
ISI Accession Number ID
WOS:000351141100017

 

DC FieldValueLanguage
dc.contributor.authorShi, RP-
dc.contributor.authorHuang, XD-
dc.contributor.authorLeung, CH-
dc.contributor.authorSin, JKO-
dc.contributor.authorLai, PT-
dc.date.accessioned2015-09-18T05:46:23Z-
dc.date.available2015-09-18T05:46:23Z-
dc.date.issued2015-
dc.identifier.citationIEEE Transactions on Device and Materials Reliability, 2015, v. 15, p. 123-126-
dc.identifier.issn1530-4388-
dc.identifier.urihttp://hdl.handle.net/10722/217026-
dc.languageeng-
dc.publisherIEEE.-
dc.relation.ispartofIEEE Transactions on Device and Materials Reliability-
dc.subjectcharge-trapping-
dc.subjecthigh-k dielectric.-
dc.subjectNb-doped La2O3 (LaNbO)-
dc.subjectNonvolatile memory-
dc.titleNb-Doped La2O3 as Charge-Trapping Layer for Nonvolatile Memory Applications-
dc.typeArticle-
dc.identifier.emailLeung, CH: hreelch@HKUCC.hku.hk-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLeung, CH=rp00146-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/TDMR.2014.2376514-
dc.identifier.scopuseid_2-s2.0-84924697078-
dc.identifier.hkuros254199-
dc.identifier.volume15-
dc.identifier.spage123-
dc.identifier.epage126-
dc.identifier.eissn1558-2574-
dc.identifier.isiWOS:000351141100017-
dc.identifier.issnl1530-4388-

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