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Article: Nitrided La2O3 as charge-trapping layer for nonvolatile memory applications

TitleNitrided La2O3 as charge-trapping layer for nonvolatile memory applications
Authors
Huang, XDSin, JKOLai, PT
KeywordsCharge-Trapping Layer (Ctl)
High-K Dielectric
Metal-Oxide-Nitride-Oxide- Silicon (Monos)
Nitrided La 2O 3
Nonvolatile Memory
Issue Date2012
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=7298
Citation
IEEE Transactions on Device and Materials Reliability, 2012, v. 12 n. 2, p. 306-310 How to Cite?
DOI: http://dx.doi.org/10.1109/TDMR.2011.2182197
AbstractCharge-trapping characteristics of La 2O 3 with and without nitrogen incorporation were investigated based on Al/Al 2O 3/La 2O 3/SiO 2Si (MONOS) capacitors. The physical properties of the high-k films were analyzed by X-ray diffraction and X-ray photoelectron spectroscopy. Compared with the MONOS capacitor with La 2O 3 as charge-trapping layer, the one with nitrided La 2O 3 showed a larger memory window (4.9 V at ±10-V sweeping voltage), higher program speed (4.9 V at 1-ms +14 V), and smaller charge loss (27% after 10 years), due to the nitrided La 2O 3 film exhibiting less crystallized structure and high trap density induced by nitrogen incorporation, and suppressed leakage by nitrogen passivation. © 2012 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/155768
ISSN
1530-4388
2023 Impact Factor: 2.5
2023 SCImago Journal Rankings: 0.436
ISI Accession Number ID
WOS:000305085100015
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorHuang, XDen_US
dc.contributor.authorSin, JKOen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2012-08-08T08:35:15Z-
dc.date.available2012-08-08T08:35:15Z-
dc.date.issued2012en_US
dc.identifier.citationIEEE Transactions on Device and Materials Reliability, 2012, v. 12 n. 2, p. 306-310en_US
dc.identifier.issn1530-4388en_US
dc.identifier.urihttp://hdl.handle.net/10722/155768-
dc.description.abstractCharge-trapping characteristics of La 2O 3 with and without nitrogen incorporation were investigated based on Al/Al 2O 3/La 2O 3/SiO 2Si (MONOS) capacitors. The physical properties of the high-k films were analyzed by X-ray diffraction and X-ray photoelectron spectroscopy. Compared with the MONOS capacitor with La 2O 3 as charge-trapping layer, the one with nitrided La 2O 3 showed a larger memory window (4.9 V at ±10-V sweeping voltage), higher program speed (4.9 V at 1-ms +14 V), and smaller charge loss (27% after 10 years), due to the nitrided La 2O 3 film exhibiting less crystallized structure and high trap density induced by nitrogen incorporation, and suppressed leakage by nitrogen passivation. © 2012 IEEE.en_US
dc.languageengen_US
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=7298-
dc.relation.ispartofIEEE Transactions on Device and Materials Reliabilityen_US
dc.subjectCharge-Trapping Layer (Ctl)en_US
dc.subjectHigh-K Dielectricen_US
dc.subjectMetal-Oxide-Nitride-Oxide- Silicon (Monos)en_US
dc.subjectNitrided La 2O 3en_US
dc.subjectNonvolatile Memoryen_US
dc.titleNitrided La2O3 as charge-trapping layer for nonvolatile memory applicationsen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/TDMR.2011.2182197en_US
dc.identifier.scopuseid_2-s2.0-84862019150en_US
dc.identifier.hkuros225747-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-84862019150&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume12en_US
dc.identifier.issue2en_US
dc.identifier.spage306en_US
dc.identifier.epage310en_US
dc.identifier.isiWOS:000305085100015-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridHuang, XD=37057428400en_US
dc.identifier.scopusauthoridSin, JKO=7103312667en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.issnl1530-4388-

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