Results 1 to 5 of 5
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TypeTitleAuthor(s)YearViews
A 2D threshold-voltage model for small MOSFET with quantum-mechanical effects
Journal:
Microelectronics Reliability
Publisher:
Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel
Xu, JP; Li, YP; Lai, PT; Chen, WB; Xu, SG; Guan, JG2008197
 
Gate leakage properties of MOS devices with tri-layer high-k gate dielectric
Journal:
Microelectronics Reliability
Publisher:
Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel
Chen, WB; Xu, JP; Lai, PT; Li, YP; Xu, SG2007146
 
Gate leakage properties of MOS devices with TriLayer high-k gate dielectric
Proceedings/Conference:
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Chen, WB; Xu, JP; Lai, PT; Li, YP; Xu, SG2006107
 
Electrical characteristics of MOS capacitor with HfTiON gate dielectric and HfTiSiON interlayer
Journal:
Chinese Physics
Publisher:
Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/cp
Chen, WB; Xu, JP; Lai, PT; Li, YP; Xu, SG; Chan, CL2006135
 
A 2-D threshold-voltage model for small MOSFET with quantum-mechanical effects
Proceedings/Conference:
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Xu, JP; Li, YP; Lai, PT; Chen, WB; Xu, SG2006171
 
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