| Title | Author(s) | Year | View Count |
 | A 2D threshold-voltage model for small MOSFET with quantum-mechanical effects | Xu, JP; Li, YP; Lai, PT; Chen, WB; Xu, SG; Guan, JG | 2008 | 145 |
| Gate leakage properties of MOS devices with tri-layer high-k gate dielectric | Chen, WB; Xu, JP; Lai, PT; Li, YP; Xu, SG | 2007 | 129 |
| Electrical characteristics of MOS capacitor with HfTiON gate dielectric and HfTiSiON interlayer | Chen, WB; Xu, JP; Lai, PT; Li, YP; Xu, SG; Chan, CL | 2006 | 92 |
| A 2-D threshold-voltage model for small MOSFET with quantum-mechanical effects | Xu, JP; Li, YP; Lai, PT; Chen, WB; Xu, SG | 2006 | 109 |
| Gate leakage properties of MOS devices with TriLayer high-k gate dielectric | Chen, WB; Xu, JP; Lai, PT; Li, YP; Xu, SG | 2006 | 73 |
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