Showing results 2 to 7 of 7
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Title | Author(s) | Issue Date | Views | |
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2007 | ||||
Electrical properties of HfTiON gate-dielectric metal-oxide-semiconductor capacitors with different Si-surface nitridations Journal:Applied Physics Letters | 2007 | 197 | ||
A fringing-capacitance model for deep-submicron MOSFET with high-k gate dielectric Journal:Microelectronics Reliability | 2008 | 176 | ||
2008 | 237 | |||
Improved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayer Journal:Applied Physics Letters | 2007 | 116 | ||
Influence of sidewall spacer on threshold voltage of MOSFET with high-k gate dielectric Journal:Microelectronics Reliability | 2008 | 227 |