File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Influence of sidewall spacer on threshold voltage of MOSFET with high-k gate dielectric

TitleInfluence of sidewall spacer on threshold voltage of MOSFET with high-k gate dielectric
Authors
Xu, JPJi, FLai, PTGuan, JG
Issue Date2008
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel
Citation
Microelectronics Reliability, 2008, v. 48 n. 2, p. 181-186 How to Cite?
DOI: http://dx.doi.org/10.1016/j.microrel.2007.03.001
AbstractIn this paper, an analytical expression of the gate-dielectric fringing-potential distribution is derived for high-k gate-dielectric MOSFET through a conformal-mapping transformation method for the first time. Based on the fringing-potential distribution, the threshold-voltage model of the MOSFET is improved, and the influence of sidewall spacer on the threshold voltage is discussed in detail. Calculated results indicate that low-k sidewall spacer can alleviate the fringing-field effect. © 2007 Elsevier Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/73765
ISSN
0026-2714
2023 Impact Factor: 1.6
2023 SCImago Journal Rankings: 0.394
ISI Accession Number ID
WOS:000254964900002
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorXu, JPen_HK
dc.contributor.authorJi, Fen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorGuan, JGen_HK
dc.date.accessioned2010-09-06T06:54:33Z-
dc.date.available2010-09-06T06:54:33Z-
dc.date.issued2008en_HK
dc.identifier.citationMicroelectronics Reliability, 2008, v. 48 n. 2, p. 181-186en_HK
dc.identifier.issn0026-2714en_HK
dc.identifier.urihttp://hdl.handle.net/10722/73765-
dc.description.abstractIn this paper, an analytical expression of the gate-dielectric fringing-potential distribution is derived for high-k gate-dielectric MOSFET through a conformal-mapping transformation method for the first time. Based on the fringing-potential distribution, the threshold-voltage model of the MOSFET is improved, and the influence of sidewall spacer on the threshold voltage is discussed in detail. Calculated results indicate that low-k sidewall spacer can alleviate the fringing-field effect. © 2007 Elsevier Ltd. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrelen_HK
dc.relation.ispartofMicroelectronics Reliabilityen_HK
dc.titleInfluence of sidewall spacer on threshold voltage of MOSFET with high-k gate dielectricen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0026-2714&volume=48&spage=181&epage=186&date=2008&atitle=Influence+of+Sidewall+Spacer+on+Threshold+Voltage+of+MOSFET+with+High-k+Gate+Dielectricen_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.microrel.2007.03.001en_HK
dc.identifier.scopuseid_2-s2.0-44249125237en_HK
dc.identifier.hkuros150297en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-44249125237&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume48en_HK
dc.identifier.issue2en_HK
dc.identifier.spage181en_HK
dc.identifier.epage186en_HK
dc.identifier.isiWOS:000254964900002-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridJi, F=8238553900en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridGuan, JG=7201449685en_HK
dc.identifier.issnl0026-2714-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats