Browsing "Department of Electrical & Electronic Engineering" by Author chan, cl

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TitleAuthor(s)Issue Date
 
Comparative study of HfTa-based gate-dielectric Ge metal-oxide- semiconductor capacitors with and without AlON interlayer
Journal:Applied Physics A: Materials Science and Processing
Xu, JPZhang, XFLi, CXChan, CLLai, PT
2010
 
Effects of chlorine on interfacial properties and reliability of SiO 2 grown on 6H-SiC
Journal:Applied Physics A: Materials Science and Processing
Xu, JPLai, PTWu, HPChan, CL
2005
 
Effects of nitridation and annealing on interface properties of thermally oxidized SiO2/SiC metal–oxide–semiconductor system
Journal:Applied Physics Letters
Lai, PTChakraborty, SChan, CLCheng, YC
2000
 
Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric
Journal:Microelectronics Reliability
Li, CXZou, XLai, PTXu, JPChan, CL
2008
 
Effects of wet N 2O oxidation on interface properties of 6H-SiC MOS capacitors
Journal:IEEE Electron Device Letters
Lai, PTXu, JPChan, CL
2002
 
Electrical characteristics of MOS capacitor with HfTiON gate dielectric and HfTiSiON interlayer
Journal:Chinese Physics
Chen, WBXu, JPLai, PTLi, YPXu, SGChan, CL
2006
 
Electrical properties and reliability of HfO 2 gate-dielectric MOS capacitors with trichloroethylene surface pretreatment
Journal:Chinese Physics
Xu, JPChen, WBLai, PTLi, YPChan, CL
2007
 
Enhanced hydrogen-sensing characteristics of MISiC Schottky-diode hydrogen sensor by trichloroethylene oxidation
Journal:Sensors and Actuators, A: Physical
Tang, WMLai, PTXu, JPChan, CL
2005
 
Fabrication and electrical characterization of MONOS memory with novel high-κ gate stack
Proceeding/Conference:2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Liu, LXu, JPChan, CLLai, PT
2009
 
Impacts of Ti content and annealing temperature on electrical properties of Si MOS capacitors with HfTiON gate dielectric
Proceeding/Conference:2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Ji, FXu, JPLi, CXLai, PTChan, CL
2009
 
Impacts of Ti on electrical properties of Ge metal-oxide-semiconductor capacitors with ultrathin high-κ LaTiON gate dielectric
Journal:Applied Physics A: Materials Science and Processing
Xu, HXXu, JPLi, CXChan, CLLai, PT
2010
 
Improved electrical properties of Ge metal-oxide-semiconductor capacitor with HfTa-based gate dielectric by using TaOxNy interlayer
Journal:Applied Physics Letters
Zhang, XFXu, JPLi, CXLai, PTChan, CLGuan, JG
2008
 
Improved electrical properties of Ge p-MOSFET with HfO 2 gate dielectric by using TaO xN y interlayer
Journal:IEEE Electron Device Letters
Xu, JPZhang, XFLi, CXLai, PTChan, CL
2008
 
Improved electrical properties of germanium MOS capacitors with gate dielectric grown in wet-NO ambient
Journal:IEEE Electron Device Letters
Xu, JPLai, PTLi, CXZou, XChan, CL
2006
 
Improved electrical properties of HfTiO/GeO x N y gate dielectric Ge MOS capacitors by using wet-NO Ge-surface pretreatment
Journal:Applied Physics A: Materials Science and Processing
Xu, JPZou, XLi, CXLai, PTChan, CL
2009
 
Improved hydrogen-sensitive properties of MISiC Schottky sensor with thin NO-grown oxynitride as gate insulator
Journal:IEEE Electron Device Letters
Xu, JPLai, PTZhong, DGChan, CL
2003
 
Improved interface properties of p-type 6H–SiC/SiO2 system by NH3 pretreatment
Journal:Applied Physics Letters
Xu, JPLai, PTChan, CLCheng, YC
2000
 
Improved interfacial properties of SiO2 grown on 6H-SiC in diluted NO
Journal:Applied Physics A: Materials Science and Processing
Lai, PTXu, JPLi, CXChan, CL
2005
 
Improved performance and reliability of N 2O-grown oxynitride on 6H-SiC
Journal:IEEE Electron Device Letters
Xu, JPLai, PTChan, CLLi, BCheng, YC
2000
 
Interface properties of N2O-annealed NH3-treated 6H-SiC MOS capacitor
Proceeding/Conference:Proceedings of the IEEE Hong Kong Electron Devices Meeting
Lai, PTXu, JPChan, CLCheng, YC
1999
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