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Conference Paper: Interface properties of N2O-annealed NH3-treated 6H-SiC MOS capacitor

TitleInterface properties of N2O-annealed NH3-treated 6H-SiC MOS capacitor
Authors
Lai, PTXu, JPChan, CLCheng, YC
Issue Date1999
Citation
Proceedings Of The Ieee Hong Kong Electron Devices Meeting, 1999, p. 46-49 How to Cite?
AbstractEffects of pre-oxidation NH3 treatment and post-oxidation N2O annealing on n-SiC/SiO2 interface properties were investigated as compared to conventional thermally-oxidized devices. It was found that NH3 treatment before oxidation is beneficial for the interface-quality improvement. Moreover, combination of NH3 treatment with N2O annealing can further harden the SiC/SiO2 interface, enhancing its resistance against high-field and high-temperature stressings.
Persistent Identifierhttp://hdl.handle.net/10722/158266

 

DC FieldValueLanguage
dc.contributor.authorLai, PTen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorChan, CLen_HK
dc.contributor.authorCheng, YCen_HK
dc.date.accessioned2012-08-08T08:58:49Z-
dc.date.available2012-08-08T08:58:49Z-
dc.date.issued1999en_HK
dc.identifier.citationProceedings Of The Ieee Hong Kong Electron Devices Meeting, 1999, p. 46-49en_US
dc.identifier.urihttp://hdl.handle.net/10722/158266-
dc.description.abstractEffects of pre-oxidation NH3 treatment and post-oxidation N2O annealing on n-SiC/SiO2 interface properties were investigated as compared to conventional thermally-oxidized devices. It was found that NH3 treatment before oxidation is beneficial for the interface-quality improvement. Moreover, combination of NH3 treatment with N2O annealing can further harden the SiC/SiO2 interface, enhancing its resistance against high-field and high-temperature stressings.en_HK
dc.languageengen_US
dc.relation.ispartofProceedings of the IEEE Hong Kong Electron Devices Meetingen_HK
dc.titleInterface properties of N2O-annealed NH3-treated 6H-SiC MOS capacitoren_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0033293549en_HK
dc.identifier.spage46en_HK
dc.identifier.epage49en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridChan, CL=8507083700en_HK
dc.identifier.scopusauthoridCheng, YC=27167728600en_HK

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