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	Title	Author(s)	Issue Date
	Prevention of base dopant out-diffusion using a heterostructure-emitter in GaInP/GaAs heterojunction bipolar transistors Journal:Semiconductor Science and Technology	Yang, YF Hsu, CC Yang, ES	1995
	Pseudomorphic Ga0.2In0.8P/Ga0.47In0.53As/InP HEMT grown by MOVPE using TBP and TBA Journal:Electronics Letters	Yang, YF Hsu, CC Yang, ES	1994
	Reactive ion etching of gallium nitride using hydrogen bromide plasmas Journal:Electronics Letters	Ping, AT Adesida, I Asif Khan, M Kuznia, JN Yang, YF Yang, ES	1994
	A reliability comparison of InGaP/GaAs HBTs with and without passivation ledge Journal:Microelectronics Reliability	Van, BP Yang, YF Hsu, CC Lo, HB Yang, ES	2001
	SiGe pMOSFET's with gate oxide fabricated by microwave electron cyclotron resonance plasma processing Journal:IEEE Electron Device Letters	Li, PW Yang, ES Yang, YF Chu, JO Meyerson, BS	1994
	State holding circuit using heterojunction bipolar transistors and resonant tunnelling diodes Journal:Electronics Letters	Yang, YF Wang, WI Yang, ES	1994
	Surface recombination current in InGaP/GaAs heterostructure-emitter bipolar transistors Journal:IEEE Transactions on Electron Devices	Yang, YF Hsu, CC Yang, ES	1994
	Temperature dependence of current gain of GalnP/GaAs heteroj unction and heterostructure-emitter bipolar transistors Journal:IEEE Transactions on Electron Devices	Yang, ES Yang, YF Hsu, CC Ou, HJ Lo, HB	1999
	Thermal effect on current gains of an AlGaAs/GaAs heterostructure-emitter bipolar transistor Journal:Applied Physics Letters	Lo, HB Yang, ES Yang, YF	1999

Showing results 13 to 21 of 21 < previous