Browsing "Faculty of Science" by Author adamu-lema, fikru

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Showing results 1 to 7 of 7
TitleAuthor(s)Issue Date
 
3-D statistical simulation comparison of oxide reliability of planar MOSFETs and FinFET
Journal:IEEE Transactions on Electron Devices
Gerrer, LouisAmoroso, Salvatore MariaMarkov, StanislavAdamu-Lema, FikruAsenov, Asen
2013
 
3D dynamic RTN simulation of a 25nm MOSFET: The importance of variability in reliability evaluation of decananometer devices
Proceeding/Conference:2012 15th International Workshop on Computational Electronics, IWCE 2012
Amoroso, Salvatore MariaAdamu-Lema, FikruMarkov, StanislavGerrer, LouisAsenov, Asen
2012
 
Accuracy and issues of the spectroscopic analysis of RTN traps in nanoscale MOSFETs
Journal:IEEE Transactions on Electron Devices
Adamu-Lema, FikruCompagnoni, Christian MonzioAmoroso, Salvatore M.Castellani, NiccolòGerrer, LouisMarkov, StanislavSpinelli, Alessandro S.Lacaita, Andrea L.Asenov, Asen
2013
 
Comprehensive statistical comparison of RTN and BTI in deeply scaled MOSFETs by means of 3D atomistic simulation
Proceeding/Conference:European Solid-State Device Research Conference
Amoroso, Salvatore M.Gerrer, LouisMarkov, StanislavAdamu-Lema, FikruAsenov, Asen
2012
 
Impact of statistical variability and 3D electrostatics on post-cycling anomalous charge loss in nanoscale Flash memories
Proceeding/Conference:IEEE International Reliability Physics Symposium Proceedings
Amoroso, Salvatore MariaGerrer, LouisAdamu-Lema, FikruMarkov, StanislavAsenov, Asen
2013
 
RTN and BTI in nanoscale MOSFETs: A comprehensive statistical simulation study
Journal:Solid-State Electronics
Amoroso, Salvatore MariaGerrer, LouisMarkov, StanislavAdamu-Lema, FikruAsenov, Asen
2013
 
Statistical interactions of multiple oxide traps under BTI stress of nanoscale MOSFETs
Journal:IEEE Electron Device Letters
Markov, StanislavAmoroso, Salvatore MariaGerrer, LouisAdamu-Lema, FikruAsenov, Asen
2013
Showing results 1 to 7 of 7