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Title	Author(s)	Issue Date
2 kV, 0.7 mO•cm<sup>2</sup> Vertical Ga<inf>2</inf>O<inf>3</inf> Superjunction Schottky Rectifier with Dynamic Robustness Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Qin, Yuan Porter, Matthew Xiao, Ming Du, Zhonghao Zhang, Hongming Ma, Yunwei Spencer, Joseph Wang, Boyan Song, Qihao Sasaki, Kohei Lin, Chia Hung Kravchenko, Ivan Briggs, Dayrl P.Hensley, Dale K.Tadjer, Marko Wang, Han Zhang, Yuhao	2023
A Simple and Accurate Method to Characterize Output Capacitance Losses of GaN HEMTs Proceeding/Conference:2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022	Song, Qihao Zhang, Ruizhe Li, Qiang Zhang, Yuhao	2022
Accelerating the Recovery of p-Gate GaN HEMTs after Overvoltage Stresses Proceeding/Conference:IEEE International Reliability Physics Symposium Proceedings	Kozak, Joseph P.Song, Qihao Liu, Jingcun Zhang, Ruizhe Li, Qiang Saito, Wataru Zhang, Yuhao	2022
Breakthrough Avalanche and Short Circuit Robustness in Vertical GaN Power Devices Proceeding/Conference:ECS Transactions	Zhang, Yuhao Zhang, Ruizhe Song, Qihao Li, Qiang Liu, J.	2022
Chip Size Minimization for Wide and Ultrawide Bandgap Power Devices Journal:IEEE Transactions on Electron Devices	Wang, Boyan Xiao, Ming Zhang, Zichen Wang, Yifan Qin, Yuan Song, Qihao Lu, Guo Quan Ngo, Khai Zhang, Yuhao	2023
Degradation and Recovery of GaN HEMTs in Overvoltage Hard Switching Near Breakdown Voltage Journal:IEEE Transactions on Power Electronics	Kozak, Joseph P.Song, Qihao Zhang, Ruizhe Ma, Yunwei Liu, Jingcun Li, Qiang Saito, Wataru Zhang, Yuhao	2023
Dynamic Gate Breakdown of p-Gate GaN HEMTs in Inductive Power Switching Journal:IEEE Electron Device Letters	Wang, Bixuan Zhang, Ruizhe Wang, Hengyu He, Quanbo Song, Qihao Li, Qiang Udrea, Florin Zhang, Yuhao	2023
Dynamic R<inf>ON</inf>Free 1.2-kV Vertical GaN JFET Journal:IEEE Transactions on Electron Devices	Yang, Xin Zhang, Ruizhe Wang, Bixuan Song, Qihao Walker, Andy Pidaparthi, Subhash Drowley, Cliff Zhang, Yuhao	2024
Evaluation and MHz Converter Application of 1.2-kV Vertical GaN JFET Journal:IEEE Transactions on Power Electronics	Yang, Xin Zhang, Ruizhe Yang, Qiuzhe Song, Qihao Litchford, Everest Walker, Andy J.Pidaparthi, Subhash Drowley, Cliff Dong, Dong Li, Qiang Zhang, Yuhao	2024
Evaluation of 650V, 100A Direct-Drive GaN Power Switch for Electric Vehicle Powertrain Applications Proceeding/Conference:2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 - Proceedings	Song, Qihao Kozak, Joseph P.Xiao, Ming Ma, Yunwei Wang, Boyan Zhang, Ruizhe Volkov, Roman Smith, Kurt Baksht, Tamara Zhang, Yuhao	2021
Evaluation of Dynamic R<inf>ON</inf>, Coss Loss, and Short-Circuit Ruggedness of 650V and 1200V Industrial Vertical GaN JFETs Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs	Yang, Xin Song, Qihao Zhang, Ruizhe Wang, Bixuan Pidaparthi, Subhash Walker, Andy Drowley, Cliff Zhang, Yuhao	2024
Exceptional Gate Overvoltage Robustness in P-Gate GaN HEMT with Integrated Circuit Interface Proceeding/Conference:Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC	Wang, Bixuan Song, Qihao Mukherjee, Kalparupa Efthymiou, Loizos Popa, Daniel Longobardi, Giorgia Udrea, Florin Zhang, Yuhao	2024
Failure Mechanisms of Cascode GaN HEMTs under Overvoltage and Surge Energy Events Proceeding/Conference:IEEE International Reliability Physics Symposium Proceedings	Song, Qihao Zhang, Ruizhe Kozak, Joseph P.Liu, Jingcun Li, Qiang Zhang, Yuhao	2021
GaN HEMTs in High-Frequency Overvoltage Switching: Electrical or Thermal Failure? Proceeding/Conference:Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC	Zhang, Ruizhe Song, Qihao Li, Qiang Zhang, Yuhao	2023
GaN MIS-HEMTs in Repetitive Overvoltage Switching: Parametric Shift and Recovery Proceeding/Conference:IEEE International Reliability Physics Symposium Proceedings	Song, Qihao Kozak, Joseph P.Ma, Yunwei Liu, Jingcun Zhang, Ruizhe Volkov, Roman Sherman, Daniel Smith, Kurt V.Saito, Wataru Zhang, Yuhao	2022
Gate Lifetime of P-Gate GaN HEMT in Inductive Power Switching Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs	Wang, Bixuan Zhang, Ruizhe Wang, Hengyu He, Quanbo Song, Qihao Li, Qiang Udrea, Florin Zhang, Yuhao	2023
Gate Lifetime of P-Gate GaN HEMT under DC and Switching Overvoltage Stress Proceeding/Conference:2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023	Wang, Bixuan Zhang, Ruizhe Song, Qihao Li, Qiang Zhang, Yuhao	2023
Gate Robustness and Reliability of P-Gate GaN HEMT Evaluated by a Circuit Method Journal:IEEE Transactions on Power Electronics	Wang, Bixuan Zhang, Ruizhe Song, Qihao Wang, Hengyu He, Quanbo Li, Qiang Udrea, Florin Zhang, Yuhao	2024
Gate Switching Lifetime of P-Gate GaN HEMT: Circuit Characterization and Generalized Model Journal:IEEE Transactions on Power Electronics	Wang, Bixuan Song, Qihao Zhang, Yuhao	2024
Hard-Switched Overvoltage Robustness of p-Gate GaN HEMTs at Increasing Temperatures Proceeding/Conference:ECCE 2020 - IEEE Energy Conversion Congress and Exposition	Kozak, Joseph P.Zhang, Ruizhe Liu, Jingcun Song, Qihao Xiao, Ming Zhang, Yuhao	2020

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