Showing results 1 to 4 of 4
| Title | Author(s) | Issue Date | |
|---|---|---|---|
Bandgap Extraction at 10 K to Enable Leakage Control in Carbon Nanotube MOSFETs Journal:IEEE Electron Device Letters | 2022 | ||
Building high performance transistors on carbon nanotube channel Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology | Pitner, GregorySafron, NathanielChao, Tzu AngLi, ShengmanSu, Sheng KaiZeevi, GiladLin, QingChiu, Hsin YuanPasslack, MatthiasZhang, ZichenSathaiya, D. MahaveerWei, AslanGilardi, CarloChen, EdwardLiew, San LinHou, Vincent D.H.Wu, Chung WeiWu, JeffLin, ZhiweiFagan, JeffreyZheng, MingWang, HanMitra, SubhasishPhilip Wong, H. S.Radu, Iuliana | 2023 | |
High On-Current 2D nFET of 390 \mu A/\mu m at V_{DS = 1V using Monolayer CVD MoS2 without Intentional Doping Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology | 2020 | ||
Perspective on Low-dimensional Channel Materials for Extremely Scaled CMOS Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology | 2022 |