HKU Scholars Hub: Browsing DSpace

Browsing by Author Piedra, Daniel

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 中

or enter first few letters:

Showing results 1 to 16 of 16

	Title	Author(s)	Issue Date
	Advanced power electronic devices based on Gallium Nitride (GaN) Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Piedra, Daniel Lu, Bin Sun, Min Zhang, Yuhao Matioli, Elison Gao, Feng Chung, Jinwook Will Saadat, Omair Xia, Ling Azize, Mohamed Palacios, Tomas	2015
	AlN metal-semiconductor field-effect transistors using Si-ion implantation Proceeding/Conference:Japanese Journal of Applied Physics	Okumura, Hironori Suihkonen, Sami Lemettinen, Jori Uedono, Akira Zhang, Yuhao Piedra, Daniel Palacios, Tomás	2018
	Electrothermal simulation and thermal performance study of GaN vertical and lateral power transistors Journal:IEEE Transactions on Electron Devices	Zhang, Yuhao Sun, Min Liu, Zhihong Piedra, Daniel Lee, Hyung Seok Gao, Feng Fujishima, Tatsuya Palacios, Tomas	2013
	Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl<inf>3</inf> surface plasma treatment Journal:Applied Physics Letters	Fujishima, Tatsuya Joglekar, Sameer Piedra, Daniel Lee, Hyung Seok Zhang, Yuhao Uedono, Akira Palacios, Tomás	2013
	GaN-on-Si vertical schottky and p-n diodes Journal:IEEE Electron Device Letters	Zhang, Yuhao Sun, Min Piedra, Daniel Azize, Mohamed Zhang, Xu Fujishima, Tatsuya Palacios, Tomás	2014
	High voltage GaN HEMT compact model: Experimental verification, field plate optimization and charge trapping Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Radhakrishna, Ujwal Piedra, Daniel Zhang, Yuhao Palacios, Tomás Antoniadis, Dimitri	2013
	High-performance 500 v quasi- and fully-vertical GaN-on-Si pn diodes Journal:IEEE Electron Device Letters	Zhang, Yuhao Piedra, Daniel Sun, Min Hennig, Jonas Dadgar, Armin Yu, Lili Palacios, Tomas	2017
	Large-Area 1.2-kV GaN vertical power FinFETs with a record switching figure of merit Journal:IEEE Electron Device Letters	Zhang, Yuhao Sun, Min Perozek, Josh Liu, Zhihong Zubair, Ahmad Piedra, Daniel Chowdhury, Nadim Gao, Xiang Shepard, Kenneth Palacios, Tomas	2019
	Materials and processing issues in vertical GaN power electronics Journal:Materials Science in Semiconductor Processing	Hu, Jie Zhang, Yuhao Sun, Min Piedra, Daniel Chowdhury, Nadim Palacios, Tomás	2018
	Native and process induced defects in GaN films grown on Si substrates probed using a monoenergetic positron beam Proceeding/Conference:2014 International Workshop on Junction Technology, IWJT 2014	Uedono, Akira Fujishima, Tatsuya Cao, Yu Joglekar, Sameer Piedra, Daniel Lee, Hyung Seok Zhang, Yuhao Zhang, Yang Yoshihara, Nakaaki Ishibashi, Shoji Sumiya, Masatomo Laboutin, Oleg Johnson, Wayne Palacios, Tomas	2014
	Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes Journal:IEEE Transactions on Electron Devices	Zhang, Yuhao Sun, Min Wong, Hiu Yung Lin, Yuxuan Srivastava, Puneet Hatem, Christopher Azize, Mohamed Piedra, Daniel Yu, Lili Sumitomo, Takamichi De Almeida Braga, Nelson Mickevicius, Rimvydas Vidas Palacios, Tomás	2015
	Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes Journal:Applied Physics Letters	Zhang, Yuhao Sun, Min Piedra, Daniel Hennig, Jonas Dadgar, Armin Palacios, Tomás	2017
	The 2018 GaN power electronics roadmap Journal:Journal of Physics D: Applied Physics	Amano, H.Baines, Y.Beam, E.Borga, Matteo Bouchet, T.Chalker, Paul R.Charles, M.Chen, Kevin J.Chowdhury, Nadim Chu, Rongming De Santi, Carlo De Souza, Maria Merlyne Decoutere, Stefaan Di Cioccio, L.Eckardt, Bernd Egawa, Takashi Fay, P.Freedsman, Joseph J.Guido, L.Häberlen, Oliver Haynes, Geoff Heckel, Thomas Hemakumara, Dilini Houston, Peter Hu, Jie Hua, Mengyuan Huang, Qingyun Huang, Alex Jiang, Sheng Kawai, H.Kinzer, Dan Kuball, Martin Kumar, Ashwani Lee, Kean Boon Li, Xu Marcon, Denis März, Martin McCarthy, R.Meneghesso, Gaudenzio Meneghini, Matteo Morvan, E.Nakajima, A.Narayanan, E. M.S.Oliver, Stephen Palacios, Tomás Piedra, Daniel Plissonnier, M.Reddy, R.Sun, Min Thayne, Iain Torres, A.Trivellin, Nicola Unni, V.Uren, Michael J.Van Hove, Marleen Wallis, David J.Wang, J.Xie, J.Yagi, S.Yang, Shu Youtsey, C.Yu, Ruiyang Zanoni, Enrico Zeltner, Stefan Zhang, Yuhao	2018
	Trench formation and corner rounding in vertical GaN power devices Journal:Applied Physics Letters	Zhang, Yuhao Sun, Min Liu, Zhihong Piedra, Daniel Hu, Jie Gao, Xiang Palacios, Tomás	2017
	Vacancy clusters introduced by CF<inf>4</inf>-based plasma treatment in GaN probed with a monoenergetic positron beam Journal:Applied Physics Express	Uedono, Akira Yoshihara, Nakaaki Zhang, Yuhao Sun, Min Piedra, Daniel Fujishima, Tatsuya Ishibashi, Shoji Sumiya, Masatomo Laboutin, Oleg Johnson, Wayne Palacios, Tomás	2014
	Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation Journal:IEEE Electron Device Letters	Zhang, Yuhao Liu, Zhihong Tadjer, Marko J.Sun, Min Piedra, Daniel Hatem, Christopher Anderson, Travis J.Luna, Lunet E.Nath, Anindya Koehler, Andrew D.Okumura, Hironori Hu, Jie Zhang, Xu Gao, Xiang Feigelson, Boris N.Hobart, Karl D.Palacios, Tómas	2017

Showing results 1 to 16 of 16