GaN-on-Si vertical schottky and p-n diodes

Abstract

This letter demonstrates GaN vertical Schottky and p-n diodes on Si substrates for the first time. With a total GaN drift layer of only 1.5-μm thick, a breakdown voltage (BV) of 205 V was achieved for GaN-on-Si Schottky diodes, and a soft BV higher than 300 V was achieved for GaN-on-Si p-n diodes with a peak electric field of 2.9 MV/cm in GaN. A trap-assisted space-charge-limited conduction mechanism determined the reverse leakage and breakdown mechanism for GaN-on-Si vertical p-n diodes. The on-resistance was 6 and 10 mΩ · cm2 for the vertical Schottky and p-n diode, respectively. These results show the promising performance of GaN-on-Si vertical devices for future power applications. © 2014 IEEE.