Showing results 1 to 14 of 14
| Title | Author(s) | Issue Date | |
|---|---|---|---|
Accelerating the Recovery of p-Gate GaN HEMTs after Overvoltage Stresses Proceeding/Conference:IEEE International Reliability Physics Symposium Proceedings | 2022 | ||
Degradation and Recovery of GaN HEMTs in Overvoltage Hard Switching Near Breakdown Voltage Journal:IEEE Transactions on Power Electronics | 2023 | ||
Degradation of SiC MOSFETs Under High-Bias Switching Events Journal:IEEE Journal of Emerging and Selected Topics in Power Electronics | 2022 | ||
Evaluation of 650V, 100A Direct-Drive GaN Power Switch for Electric Vehicle Powertrain Applications Proceeding/Conference:2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 - Proceedings | 2021 | ||
Failure Mechanisms of Cascode GaN HEMTs under Overvoltage and Surge Energy Events Proceeding/Conference:IEEE International Reliability Physics Symposium Proceedings | 2021 | ||
GaN MIS-HEMTs in Repetitive Overvoltage Switching: Parametric Shift and Recovery Proceeding/Conference:IEEE International Reliability Physics Symposium Proceedings | 2022 | ||
Hard-Switched Overvoltage Robustness of p-Gate GaN HEMTs at Increasing Temperatures Proceeding/Conference:ECCE 2020 - IEEE Energy Conversion Congress and Exposition | 2020 | ||
Physics of Degradation in SiC MOSFETs Stressed by Overvoltage and Overcurrent Switching Proceeding/Conference:IEEE International Reliability Physics Symposium Proceedings | 2020 | ||
Robustness Evaluation and Degradation Mechanisms of SiC MOSFETs Overstressed by Switched Stimuli Proceeding/Conference:Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC | 2020 | ||
Robustness of cascode GaN HEMTs under repetitive overvoltage and surge energy stresses Proceeding/Conference:Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC | 2021 | ||
Robustness of GaN Gate Injection Transistors under Repetitive Surge Energy and Overvoltage Proceeding/Conference:IEEE International Reliability Physics Symposium Proceedings | 2021 | ||
Surge Energy Robustness of GaN Gate Injection Transistors Proceeding/Conference:IEEE International Reliability Physics Symposium Proceedings | 2020 | ||
Surge-Energy and Overvoltage Ruggedness of P-Gate GaN HEMTs Journal:IEEE Transactions on Power Electronics | 2020 | ||
True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching Journal:IEEE Electron Device Letters | 2021 |