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	Title	Author(s)	Issue Date
	Dislocation core structures in Si-doped GaN Journal:Applied Physics Letters	Rhode, S. L.Horton, M. K.Fu, W. Y.Sahonta, S. L.Kappers, M. J.Pennycook, T. J.Humphreys, C. J.Dusane, R. O.Moram, M. A.	2015
	Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method Journal:APL Materials	Griffiths, J. T.Zhu, T.Oehler, F.Emery, R. M.Fu, W. Y.Reid, B. P.L.Taylor, R. A.Kappers, M. J.Humphreys, C. J.Oliver, R. A.	2014
	Structure and strain relaxation effects of defects in In<inf>x</inf>Ga<inf>1-x</inf>N epilayers Journal:Journal of Applied Physics	Rhode, S. L.Fu, W. Y.Moram, M. A.Massabuau, F. C.P.Kappers, M. J.McAleese, C.Oehler, F.Humphreys, C. J.Dusane, R. O.Sahonta, S. L.	2014
	The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem Journal:Ultramicroscopy	Humphreys, C. J.Griffiths, J. T.Tang, F.Oehler, F.Findlay, S. D.Zheng, C.Etheridge, J.Martin, T. L.Bagot, P. A.J.Moody, M. P.Sutherland, D.Dawson, P.Schulz, S.Zhang, S.Fu, W. Y.Zhu, T.Kappers, M. J.Oliver, R. A.	2017

Showing results 1 to 4 of 4