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Article: Dislocation core structures in Si-doped GaN
Title | Dislocation core structures in Si-doped GaN |
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Authors | |
Issue Date | 2015 |
Citation | Applied Physics Letters, 2015, v. 107, n. 24, article no. 243104 How to Cite? |
Abstract | Aberration-corrected scanning transmission electron microscopy was used to investigate the core structures of threading dislocations in plan-view geometry of GaN films with a range of Si-doping levels and dislocation densities ranging between (5 ± 1) × 108 and (10 ± 1) × 109 cm-2. All a-type (edge) dislocation core structures in all samples formed 5/7-atom ring core structures, whereas all (a + c)-type (mixed) dislocations formed either double 5/6-atom, dissociated 7/4/8/4/9-atom, or dissociated 7/4/8/4/8/4/9-atom core structures. This shows that Si-doping does not affect threading dislocation core structures in GaN. However, electron beam damage at 300 keV produces 4-atom ring structures for (a + c)-type cores in Si-doped GaN. |
Persistent Identifier | http://hdl.handle.net/10722/302309 |
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Rhode, S. L. | - |
dc.contributor.author | Horton, M. K. | - |
dc.contributor.author | Fu, W. Y. | - |
dc.contributor.author | Sahonta, S. L. | - |
dc.contributor.author | Kappers, M. J. | - |
dc.contributor.author | Pennycook, T. J. | - |
dc.contributor.author | Humphreys, C. J. | - |
dc.contributor.author | Dusane, R. O. | - |
dc.contributor.author | Moram, M. A. | - |
dc.date.accessioned | 2021-08-30T13:58:13Z | - |
dc.date.available | 2021-08-30T13:58:13Z | - |
dc.date.issued | 2015 | - |
dc.identifier.citation | Applied Physics Letters, 2015, v. 107, n. 24, article no. 243104 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10722/302309 | - |
dc.description.abstract | Aberration-corrected scanning transmission electron microscopy was used to investigate the core structures of threading dislocations in plan-view geometry of GaN films with a range of Si-doping levels and dislocation densities ranging between (5 ± 1) × 108 and (10 ± 1) × 109 cm-2. All a-type (edge) dislocation core structures in all samples formed 5/7-atom ring core structures, whereas all (a + c)-type (mixed) dislocations formed either double 5/6-atom, dissociated 7/4/8/4/9-atom, or dissociated 7/4/8/4/8/4/9-atom core structures. This shows that Si-doping does not affect threading dislocation core structures in GaN. However, electron beam damage at 300 keV produces 4-atom ring structures for (a + c)-type cores in Si-doped GaN. | - |
dc.language | eng | - |
dc.relation.ispartof | Applied Physics Letters | - |
dc.title | Dislocation core structures in Si-doped GaN | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1063/1.4937457 | - |
dc.identifier.scopus | eid_2-s2.0-84950119476 | - |
dc.identifier.volume | 107 | - |
dc.identifier.issue | 24 | - |
dc.identifier.spage | article no. 243104 | - |
dc.identifier.epage | article no. 243104 | - |
dc.identifier.isi | WOS:000367318600044 | - |