Showing results 1 to 5 of 5
Title | Author(s) | Issue Date | |
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2018 | |||
HfTiON as charge-trapping layer for nonvolatile memory applications Proceeding/Conference:ECS Meeting | 2012 | ||
High-Performance Amorphous InGaZnO Thin-Film Transistor with ZrLaO Gate Dielectric Fabricated at Room Temperature Journal:Journal of Display Technology | 2016 | ||
Improved Stability of α -InGaZnO Thin-Film Transistor under Positive Gate Bias Stress by Using Fluorine Plasma Treatment Journal:IEEE Electron Device Letters | 2017 | ||
Nb-doped Ga2O3 as charge-trapping layer for nonvolatile memory applications Journal:Microelectronics Reliability | 2016 |