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Article: Effects of Back Interface on Performance of Dual-Gate InGaZnO Thin-Film Transistor With an Unisolated Top Gate Structure

TitleEffects of Back Interface on Performance of Dual-Gate InGaZnO Thin-Film Transistor With an Unisolated Top Gate Structure
Authors
Zhang, CLi, DLai, PTHuang, XD
Issue Date2021
Citation
IEEE Electron Device Letters, 2021, v. 42, p. 1176-1179 How to Cite?
DOI: http://dx.doi.org/10.1109/LED.2021.3093437
Persistent Identifierhttp://hdl.handle.net/10722/314782
ISI Accession Number ID
WOS:000678335600023

 

DC FieldValueLanguage
dc.contributor.authorZhang, C-
dc.contributor.authorLi, D-
dc.contributor.authorLai, PT-
dc.contributor.authorHuang, XD-
dc.date.accessioned2022-08-05T09:34:29Z-
dc.date.available2022-08-05T09:34:29Z-
dc.date.issued2021-
dc.identifier.citationIEEE Electron Device Letters, 2021, v. 42, p. 1176-1179-
dc.identifier.urihttp://hdl.handle.net/10722/314782-
dc.languageeng-
dc.relation.ispartofIEEE Electron Device Letters-
dc.titleEffects of Back Interface on Performance of Dual-Gate InGaZnO Thin-Film Transistor With an Unisolated Top Gate Structure-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1109/LED.2021.3093437-
dc.identifier.hkuros335011-
dc.identifier.volume42-
dc.identifier.spage1176-
dc.identifier.epage1179-
dc.identifier.isiWOS:000678335600023-

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