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Article: High-Performance Amorphous InGaZnO Thin-Film Transistor with ZrLaO Gate Dielectric Fabricated at Room Temperature

TitleHigh-Performance Amorphous InGaZnO Thin-Film Transistor with ZrLaO Gate Dielectric Fabricated at Room Temperature
Authors
Huang, XDMa, YSONG, JLai, PT
KeywordsAmorphous InGaZnO (a-IGZO)
High-k gate dielectric
Low thermal budget
Thin-film transistor
Issue Date2016
Citation
Journal of Display Technology, 2016, v. 12, p. 1522-1527 How to Cite?
DOI: http://dx.doi.org/10.1109/JDT.2016.2630046
Persistent Identifierhttp://hdl.handle.net/10722/247433
ISSN
1551-319X
2016 Impact Factor: 1.530
2019 SCImago Journal Rankings: 0.355
ISI Accession Number ID
WOS:000393996200006

 

DC FieldValueLanguage
dc.contributor.authorHuang, XD-
dc.contributor.authorMa, Y-
dc.contributor.authorSONG, J-
dc.contributor.authorLai, PT-
dc.date.accessioned2017-10-18T08:27:11Z-
dc.date.available2017-10-18T08:27:11Z-
dc.date.issued2016-
dc.identifier.citationJournal of Display Technology, 2016, v. 12, p. 1522-1527-
dc.identifier.issn1551-319X-
dc.identifier.urihttp://hdl.handle.net/10722/247433-
dc.languageeng-
dc.relation.ispartofJournal of Display Technology-
dc.subjectAmorphous InGaZnO (a-IGZO)-
dc.subjectHigh-k gate dielectric-
dc.subjectLow thermal budget-
dc.subjectThin-film transistor-
dc.titleHigh-Performance Amorphous InGaZnO Thin-Film Transistor with ZrLaO Gate Dielectric Fabricated at Room Temperature-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1109/JDT.2016.2630046-
dc.identifier.scopuseid_2-s2.0-85010289429-
dc.identifier.hkuros280861-
dc.identifier.volume12-
dc.identifier.spage1522-
dc.identifier.epage1527-
dc.identifier.eissn1558-9323-
dc.identifier.isiWOS:000393996200006-
dc.identifier.issnl1551-319X-

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