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Article: An InGaZnO Charge-Trapping Nonvolatile Memory With the Same Structure of a Thin-Film Transistor

TitleAn InGaZnO Charge-Trapping Nonvolatile Memory With the Same Structure of a Thin-Film Transistor
Authors
Zhang, CLi, DLai, PTHuang, XD
Issue Date2022
Citation
IEEE Electron Device Letters, 2022, v. 43, p. 32-35 How to Cite?
DOI: http://dx.doi.org/10.1109/LED.2021.3131715
Persistent Identifierhttp://hdl.handle.net/10722/315116
ISI Accession Number ID
WOS:000736740500012

 

DC FieldValueLanguage
dc.contributor.authorZhang, C-
dc.contributor.authorLi, D-
dc.contributor.authorLai, PT-
dc.contributor.authorHuang, XD-
dc.date.accessioned2022-08-05T09:40:29Z-
dc.date.available2022-08-05T09:40:29Z-
dc.date.issued2022-
dc.identifier.citationIEEE Electron Device Letters, 2022, v. 43, p. 32-35-
dc.identifier.urihttp://hdl.handle.net/10722/315116-
dc.languageeng-
dc.relation.ispartofIEEE Electron Device Letters-
dc.titleAn InGaZnO Charge-Trapping Nonvolatile Memory With the Same Structure of a Thin-Film Transistor-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1109/LED.2021.3131715-
dc.identifier.hkuros335014-
dc.identifier.volume43-
dc.identifier.spage32-
dc.identifier.epage35-
dc.identifier.isiWOS:000736740500012-

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