Browsing by Author Fleischer, S

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Showing results 1 to 16 of 16
TitleAuthor(s)Issue Date
 
Deconvolution of Doppler-broadened positron annihilation lineshapes by the generalised least-squares method
Journal:Applied Surface Science
Panda, BKFleischer, SLing, CCBeling, CDFung, SPanda, S
1995
 
Doppler-broadening measurements of microvoids at the Au/GaAs interface
Journal:Applied Physics A Materials Science & Processing
Ling, CCShan, YYPanda, BKFleischer, SBeling, CDFung, S
1995
 
Effects of nitridation and re-oxidation on drain leakage current in n-channel MOSFETs
Proceeding/Conference:Conference on Solid State Devices and Materials
Fleischer, SLiu, ZHLai, PTMa, ZJCheng, YC
1990
 
Effects of nitridation temperature on the electron trap characteristics of nitrided-oxide metal-oxide-semiconductor capacitors
Journal:Journal of Applied Physics
Fleischer, SLai, PTCheng, YC
1993
 
Impact of nitridation/reoxidation on performance degradation in n-MOSFETs under Fowler-Nordheim injection
Journal:Solid-State Electronics
Ma, ZJLiu, ZHLai, PTFleischer, SCheng, YC
1992
 
Multiple ryanodine receptor subtypes and heterogeneous ryanodine receptor-gated Ca 2+ stores in pulmonary arterial smooth muscle cells
Journal:American Journal of Physiology - Lung Cellular and Molecular Physiology
Yang, XRLin, MJYip, KPJeyakumar, LHFleischer, SLeung, GPHSham, JSK
2005
 
A new method for extracting the trap energy in insulators
Journal:Journal of Applied Physics
Fleischer, SLai, PTCheng, YC
1993
 
Off-state leakage currents in n-channel metal-oxide-semiconductor field-effect transistors with 10-nm thermally nitrided and reoxidized nitrided oxides as the gate dielectric
Journal:Applied Physics Letters
Fleischer, SLiu, ZHLai, PTKo, PKCheng, YC
1991
 
Positron beam study of low-temperature-grown GaAs with aluminum delta layers
Journal:Applied Surface Science
Fleischer, SHu, YFBeling, CDFung, SSmith, TLMoulding, KMWeng, HMMissous, M
1999
 
Positron studies of arsenic precipitation in low-temperature GaAs grown by molecular beam epitaxy
Proceeding/Conference:Proceedings of the IEEE Hong Kong Electron Devices Meeting
Fleischer, SSurya, CHu, YFBeling, CDFung, SMissous, M
1997
 
Simplified closed-form trap-assisted tunneling model applied to nitrided oxide dielectric capacitors
Journal:Journal of Applied Physics
Fleischer, SLai, PTCheng, YC
1992
 
Structural and defect characterization of GaAs and Al xGa 1-xAs grown at low temperature by molecular beam epitaxy
Journal:Journal of Applied Physics
Fleischer, SBeling, CDFung, SNieveen, WRSquire, JEZheng, JQMissous, M
1997
 
A study of the vacancy-defect distribution in a GaAs/Al xGa 1-xAs multi-layer structure grown at low temperature
Journal:Journal of Crystal Growth
Fleischer, SSurya, CHu, YFBeling, CDFung, SSmith, TLMoulding, KMMissous, M
1999
 
The influence of ion implantation on the off-state leakage characteristics of n-MOSFETs with ultrathin oxide, nitrided-oxide and re-oxidized nitrided-oxide gate dielectrics
Proceeding/Conference:International Conference on VLSI and CAD Proceedings
Fleischer, SLai, PTCheng, YC
1993
 
Trap-assisted conduction in nitrided-oxide and re-oxidized nitrided-oxide n-channel metal-oxide-semiconductor field-effect transistors
Journal:Journal of Applied Physics
Fleischer, SLai, PTCheng, YC
1993
 
Tunneling-injection-induced turnaround behavior of threshold voltage in thermally nitrided oxide n-channel metal-oxide-semiconductor field-effect transistors
Journal:Journal of Applied Physics
Ma, ZJLai, PTLiu, ZHFleischer, SCheng, YC
1990
Showing results 1 to 16 of 16