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Conference Paper: The influence of ion implantation on the off-state leakage characteristics of n-MOSFETs with ultrathin oxide, nitrided-oxide and re-oxidized nitrided-oxide gate dielectrics

TitleThe influence of ion implantation on the off-state leakage characteristics of n-MOSFETs with ultrathin oxide, nitrided-oxide and re-oxidized nitrided-oxide gate dielectrics
Authors
Fleischer, SLai, PTCheng, YC
Issue Date1993
PublisherIEEE.
Citation
Proceedings of 3rd IEEE International Conference on VLSI and CAD (ICVC'93), Taejon, Korea, 15-17 November 1993, p. 78-82 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/204136

 

DC FieldValueLanguage
dc.contributor.authorFleischer, S-
dc.contributor.authorLai, PT-
dc.contributor.authorCheng, YC-
dc.date.accessioned2014-09-19T20:06:36Z-
dc.date.available2014-09-19T20:06:36Z-
dc.date.issued1993-
dc.identifier.citationProceedings of 3rd IEEE International Conference on VLSI and CAD (ICVC'93), Taejon, Korea, 15-17 November 1993, p. 78-82-
dc.identifier.urihttp://hdl.handle.net/10722/204136-
dc.languageeng-
dc.publisherIEEE.-
dc.relation.ispartofInternational Conference on VLSI and CAD Proceedings-
dc.rightsInternational Conference on VLSI and CAD Proceedings. Copyright © IEEE.-
dc.titleThe influence of ion implantation on the off-state leakage characteristics of n-MOSFETs with ultrathin oxide, nitrided-oxide and re-oxidized nitrided-oxide gate dielectrics-
dc.typeConference_Paper-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.emailCheng, YC: yccheng@hkucc.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.hkuros240601-
dc.identifier.spage78-
dc.identifier.epage82-
dc.publisher.placeUnited States-

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