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Article: A study of the vacancy-defect distribution in a GaAs/Al xGa 1-xAs multi-layer structure grown at low temperature
Title | A study of the vacancy-defect distribution in a GaAs/Al xGa 1-xAs multi-layer structure grown at low temperature |
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Authors | |
Issue Date | 1999 |
Publisher | Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro |
Citation | Journal Of Crystal Growth, 1999, v. 196 n. 1, p. 53-61 How to Cite? |
Abstract | We have grown a multilayer structure of GaAs and Al xGa 1-xAs (x = 0.25) by molecular beam epitaxy at low substrate temperature (250°C) in order to investigate the effects of annealing on arsenic precipitation and vacancy-defect formation. The as-grown heterostructure contained ∼5 × 10 17 cm -3 gallium vacancies, but information about the individual layers was lost because the layer width ( ∼ 45 nm) was smaller than the average positron diffusion length ( ∼ 70 nm). Annealing at 500 and 600°C showed increases in the S-parameter (above the bulk value) of ∼2.5% and ∼1.5%, respectively, smaller than for a single LT-GaAs layer (∼3-4%). We explain this phenomenon by suggesting that the excess arsenic which migrates from the material with the higher precipitate/matrix energy (LT-Al xGa 1-xAs) reduces the gallium vacancy concentration in the LT-GaAs and hence the S-parameter. This hypothesis is supported by SIMS data which shows a build-up of As in the LT-GaAs layers, and TEM images which indicate that arsenic precipitation occurs to a greater extent in the LT-GaAs than in the LT-Al xGa 1-xAs. © 1999 Published by Elsevier Science B.V. All rights reserved. |
Persistent Identifier | http://hdl.handle.net/10722/174779 |
ISSN | 2023 Impact Factor: 1.7 2023 SCImago Journal Rankings: 0.379 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Fleischer, S | en_HK |
dc.contributor.author | Surya, C | en_HK |
dc.contributor.author | Hu, YF | en_HK |
dc.contributor.author | Beling, CD | en_HK |
dc.contributor.author | Fung, S | en_HK |
dc.contributor.author | Smith, TL | en_HK |
dc.contributor.author | Moulding, KM | en_HK |
dc.contributor.author | Missous, M | en_HK |
dc.date.accessioned | 2012-11-26T08:47:24Z | - |
dc.date.available | 2012-11-26T08:47:24Z | - |
dc.date.issued | 1999 | en_HK |
dc.identifier.citation | Journal Of Crystal Growth, 1999, v. 196 n. 1, p. 53-61 | en_HK |
dc.identifier.issn | 0022-0248 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/174779 | - |
dc.description.abstract | We have grown a multilayer structure of GaAs and Al xGa 1-xAs (x = 0.25) by molecular beam epitaxy at low substrate temperature (250°C) in order to investigate the effects of annealing on arsenic precipitation and vacancy-defect formation. The as-grown heterostructure contained ∼5 × 10 17 cm -3 gallium vacancies, but information about the individual layers was lost because the layer width ( ∼ 45 nm) was smaller than the average positron diffusion length ( ∼ 70 nm). Annealing at 500 and 600°C showed increases in the S-parameter (above the bulk value) of ∼2.5% and ∼1.5%, respectively, smaller than for a single LT-GaAs layer (∼3-4%). We explain this phenomenon by suggesting that the excess arsenic which migrates from the material with the higher precipitate/matrix energy (LT-Al xGa 1-xAs) reduces the gallium vacancy concentration in the LT-GaAs and hence the S-parameter. This hypothesis is supported by SIMS data which shows a build-up of As in the LT-GaAs layers, and TEM images which indicate that arsenic precipitation occurs to a greater extent in the LT-GaAs than in the LT-Al xGa 1-xAs. © 1999 Published by Elsevier Science B.V. All rights reserved. | en_HK |
dc.language | eng | en_US |
dc.publisher | Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro | en_HK |
dc.relation.ispartof | Journal of Crystal Growth | en_HK |
dc.rights | Journal of Crystal Growth. Copyright © Elsevier BV. | - |
dc.title | A study of the vacancy-defect distribution in a GaAs/Al xGa 1-xAs multi-layer structure grown at low temperature | en_HK |
dc.type | Article | en_HK |
dc.identifier.email | Beling, CD: cdbeling@hkucc.hku.hk | en_HK |
dc.identifier.email | Fung, S: sfung@hku.hk | en_HK |
dc.identifier.authority | Beling, CD=rp00660 | en_HK |
dc.identifier.authority | Fung, S=rp00695 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1016/S0022-0248(98)00608-3 | - |
dc.identifier.scopus | eid_2-s2.0-0032784885 | en_HK |
dc.identifier.hkuros | 39292 | - |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-0032784885&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 196 | en_HK |
dc.identifier.issue | 1 | en_HK |
dc.identifier.spage | 53 | en_HK |
dc.identifier.epage | 61 | en_HK |
dc.identifier.isi | WOS:000077880300008 | - |
dc.publisher.place | Netherlands | en_HK |
dc.identifier.scopusauthorid | Fleischer, S=7103394445 | en_HK |
dc.identifier.scopusauthorid | Surya, C=7003939256 | en_HK |
dc.identifier.scopusauthorid | Hu, YF=7407119615 | en_HK |
dc.identifier.scopusauthorid | Beling, CD=7005864180 | en_HK |
dc.identifier.scopusauthorid | Fung, S=7201970040 | en_HK |
dc.identifier.scopusauthorid | Smith, TL=7405497420 | en_HK |
dc.identifier.scopusauthorid | Moulding, KM=6701466356 | en_HK |
dc.identifier.scopusauthorid | Missous, M=7007147933 | en_HK |
dc.identifier.issnl | 0022-0248 | - |